| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,003 pcs
|
2003 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXTH110N25T is a high-performance N-Channel MOSFET. It is rated for a continuous drain current of 110A and a drain-source breakdown voltage of 250V. The MOSFET exhibits a low on-resistance of 24mOhm at 55A and 10V gate-source voltage, making it efficient for power switching applications.
This device utilizes MOSFET technology and is configured as a single N-channel enhancement mode transistor. It operates within a temperature range of -55°C to 150°C. The power dissipation is rated at 694W (Tc).
The IXTH110N25T is supplied in a TO-247-3 package, designed for through-hole mounting. Its typical rise and fall times are 27 ns, with turn-on and turn-off delay times of 19 ns and 60 ns, respectively. The maximum gate-source voltage is ±20V, and the gate threshold voltage is 4.5V at 1mA.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 110A.
The drain-source breakdown voltage is 250V.
The maximum on-resistance is 24mOhm at 55A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C.
It is supplied in a TO-247-3 package.
The IXTH110N25T is designed for through-hole mounting.