Mfr Part #:

IXTA8N70X2

Mfr Name: IXYS

The IXTA8N70X2 is an N-Channel Enhancement Mode Power MOSFET from IXYS, designed for high power density applications. It features a 700V breakdown voltage and 8A continuous drain current.

✓ Total Stock: 45 pcs

$ Price Range: $2.93

IXTA8N70X2 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Bristol Electronics ✓ Non-Authorised Inventory information	45 pcs On Request	45 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IXTA8N70X2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	IXYS
Input Capacitance	800pF
Mounting Type	Surface Mount
Power Dissipation	150W
Storage Temperature	-55°C to +150°C
Weight	2.50g

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IXTA8N70X2 Description

Short technical summary and product information.

The IXTA8N70X2 is an N-Channel Enhancement Mode Power MOSFET manufactured by IXYS, part of their X2-Class series. This component is designed for applications requiring high power density and ease of mounting, such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives.

Key electrical characteristics include a Drain-Source Breakdown Voltage (BVDSS) of 700V and a Continuous Drain Current (ID25) of 8A at 25°C. The Static Drain-Source On-Resistance (RDS(on)) is a maximum of 500mΩ under specific test conditions. The device also offers a low package inductance and is avalanche rated.

This MOSFET is available in the TO-263 package, which is suitable for surface mounting. It operates within a junction temperature range of -55°C to +150°C. The low RDS(on) and low QG contribute to its advantages in space savings and efficient power conversion.

Applications for the IXTA8N70X2 include switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics and servo controls. Its robust design and standard package make it a versatile component for power electronics.

IXTA8N70X2 Quick Information

Product Type: MOSFET

Series: X2

Canonical Name: IXTA8N70X2 N-Channel Enhancement Mode Power MOSFET

Subcategory: N-Channel

IXTA8N70X2 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IXTA8N70X2 Estimated Pricing

Qty	Low	High
1+	$2.93	$2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTA8N70X2 Features

700V Drain-Source Breakdown Voltage.
8A Continuous Drain Current.
500mΩ Maximum On-Resistance.
Avalanche Rated.
TO-263 Surface Mount Package.

IXTA8N70X2 Applications

Switch-mode power supplies.
DC-DC converters.
PFC circuits.
AC and DC motor drives.
Robotics and servo controls.

IXTA8N70X2 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the IXTA8N70X2?

The drain-source breakdown voltage is 700V minimum.

What is the continuous drain current rating?

The continuous drain current is 8A at 25°C case temperature.

What is the on-resistance of the IXTA8N70X2?

The maximum on-resistance is 500mΩ at VGS=10V and ID=4A.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to +150°C.

What package is the IXTA8N70X2 available in?

It is available in a TO-263 (D2PAK) surface mount package.

What is the gate threshold voltage?

The gate threshold voltage is 3V typical and 5V maximum at VDS=VGS, ID=250μA.

What are the typical switching times?

Typical switching times: turn-on delay 24ns, rise time 28ns, turn-off delay 53ns, fall time 24ns.