| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
51 pcs
|
51 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-04-21 06:15:11 |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXTA76P10T-TRL is a P-Channel MOSFET manufactured by IXYS. It offers a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 76A at 25°C. The device features a low on-resistance (Rds On) of 25mOhm at 38A and 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It has a gate charge (Qg) of 197 nC at 10V and an input capacitance (Ciss) of 13700 pF at 25V. The maximum gate-source voltage (Vgs) is ±15V, and the gate threshold voltage (Vgs(th)) is 4V at 250µA.
The IXTA76P10T-TRL is packaged in a TO-263 (D2Pak) surface mount package, making it suitable for various electronic designs. Its power dissipation is rated at 298W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 100V.
The continuous drain current (Id) is 76A at 25°C.
The Rds On is a maximum of 25mOhm at 38A and 10V.
The operating temperature range is -55°C to 150°C (TJ).
It is in a TO-263 (D2Pak) surface mount package.