| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,427 pcs
|
7427 pcs | On Request | 1 | On Request | On Request | 1511+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The IXTA6N50D2 is an N-Channel MOSFET manufactured by IXYS. This component features a drain-source breakdown voltage of 500V and a continuous drain current of 6A (Tc). The on-resistance is specified as 500mOhm at 3A and 0V gate-source voltage.
Designed for surface mount applications, the MOSFET is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, specifically the TO-263AA supplier device package. It operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation rating of 300W (Tc).
Key electrical characteristics include an input capacitance (Ciss) of 2800 pF at 25V and a gate charge (Qg) of 96 nC at 5V. The gate-source voltage (Vgs) maximum is ±20V. The technology used is MOSFET (Metal Oxide), and it functions as a depletion mode device.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 500 V.
The continuous drain current is 6 A.
The maximum on-resistance is 500 mOhm at 3A and 0V gate-source voltage.
The operating temperature range is -55°C to 150°C.
It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
Yes, it is RoHS3 Compliant.