IXTA3N120 The IXYS IXTA3N120 is an N-Channel Power MOSFET designed for high voltage applications. It features a 1200V drain-source voltage and a 3A continuous drain current.
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IXTA3N120

Available from 3 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTA3N120 is an N-Channel Power MOSFET designed for high voltage applications. It features a 1200V drain-source voltage and a 3A continuous drain current.
Total Stock: 7,173 pcs
$ Price Range: $0.99

IXTA3N120 Available from 3 distributors

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7,030 pcs
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115 pcs
115 pcs On Request 1 On Request On Request 10+ On Request On Request
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28 pcs
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IXTA3N120 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

IXTA3N120 Description

Short technical summary and product information.

The IXYS IXTA3N120 is a high-voltage N-Channel Power MOSFET. It is rated for a maximum drain-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 3A at 25°C.

 

This MOSFET has a maximum on-resistance (Rds(on)) of 4.5 Ohms at 1.5A and 10V gate drive. Key electrical characteristics include an input capacitance (Ciss) up to 1350 pF and a gate charge (Qg) of 42 nC at 10V.

 

The device operates across a wide temperature range from -55°C to 150°C (TJ) and has a maximum power dissipation of 200W (Tc). It is housed in a TO-263AA surface-mount package, making it suitable for various power supply and switching applications.

 

Features include avalanche rating and a fast intrinsic diode. The molding epoxies meet UL 94 V-0 flammability classification. This MOSFET is designed for applications such as high voltage power supplies, capacitor discharge circuits, and pulse circuits.

IXTA3N120 Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXTA3N120 N-Channel 1200V 3A Surface Mount MOSFET
Subcategory: N-Channel

IXTA3N120 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTA3N120 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTA3N120 Features

  • 1200V drain-source voltage rating.
  • 3A continuous drain current.
  • 4.5 Ohm maximum on-resistance.
  • TO-263AA surface mount package.
  • Avalanche rated with fast intrinsic diode.

IXTA3N120 Applications

  • Suitable for high-voltage power supply applications.
  • Ideal for capacitor discharge and pulse circuits.
  • Used in high-power switching and inverter circuits.
  • Applicable in high-temperature and rugged environments.

IXTA3N120 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the IXTA3N120?

The drain-source voltage (Vdss) is 1200V.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current (ID) is 3A.

What package type does the IXTA3N120 come in?

It is packaged in a TO-263 package suitable for surface mounting.

What is the maximum gate voltage for this MOSFET?

The maximum gate voltage (Vgs) is ±20V.

What is the maximum operating temperature?

The device operates within a temperature range of -55°C to +150°C.

Is the IXTA3N120 RoHS compliant?

Yes, it is RoHS3 compliant.

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