IXTA36P15P The IXTA36P15P is a P-Channel MOSFET from IXYS with a drain-source voltage of 150V and a continuous drain current of 36A. It features a low on-resistance of 110mOhm.
Mfr Part #:

IXTA36P15P

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXTA36P15P is a P-Channel MOSFET from IXYS with a drain-source voltage of 150V and a continuous drain current of 36A. It features a low on-resistance of 110mOhm.
Total Stock: 295 pcs
$ Price Range: $0.99

IXTA36P15P Available from 1 distributor

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IXTA36P15P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Number of Channels
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTA36P15P Description

Short technical summary and product information.

The IXTA36P15P is a P-Channel enhancement mode Power MOSFET manufactured by IXYS. It is designed for applications requiring high-side switching and push-pull amplifiers.

 

Key electrical specifications include a drain-source breakdown voltage (Vds) of 150V and a continuous drain current (Id) of 36A at 25°C case temperature. The on-resistance (Rds(on)) is a maximum of 110mOhm at 18A and 10V gate-source voltage. The device can handle a maximum power dissipation of 300W at 25°C case temperature.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is packaged in a TO-263-3, D²Pak surface mount package, making it suitable for various electronic designs. The device also features avalanche rating and a fast intrinsic diode.

 

Applications include DC choppers, automatic test equipment, and current regulators. Its rugged PolarPTM process ensures reliability.

IXTA36P15P Quick Information

Product Type: MOSFET
Series: Ixta36p15
Canonical Name: IXTA36P15P P-Channel MOSFET
Subcategory: P-Channel

IXTA36P15P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTA36P15P Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTA36P15P Features

  • P-Channel enhancement mode MOSFET.
  • 150V drain-source breakdown voltage.
  • 36A continuous drain current.
  • 110mOhm maximum on-resistance.
  • 300W maximum power dissipation.

IXTA36P15P Applications

  • Suitable for high-side switching.
  • Used in push-pull amplifiers.
  • Applicable for DC choppers.
  • Designed for automatic test equipment.
  • Used as current regulators.

IXTA36P15P FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IXTA36P15P?

The drain-source breakdown voltage (Vds) is 150V.

What is the continuous drain current for the IXTA36P15P?

The continuous drain current (Id) is 36A at 25°C case temperature.

What is the maximum on-resistance of the IXTA36P15P?

The maximum on-resistance (Rds On) is 110mOhm at 18A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the IXTA36P15P MOSFET supplied in?

The MOSFET is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

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