| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,900 pcs
|
2900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXTA26P20P is a P-Channel MOSFET manufactured by IXYS, designed for various power switching applications. It offers a drain-source breakdown voltage (Vdss) of 200V and a continuous drain current (Id) of 26A at 25°C case temperature.
Key electrical characteristics include a maximum drain-source on-resistance (Rds On) of 170mOhm at 13A and 10V gate-source voltage, and a gate charge (Qg) of 56nC at 10V. The MOSFET operates within a temperature range of -55°C to 175°C.
This device is packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount package, suitable for automated assembly processes. Its technology is MOSFET (Metal Oxide), and it is classified as a single P-Channel enhancement mode device.
Applications for this MOSFET include high-side switching, push-pull amplifiers, DC choppers, and current regulators. Its features such as avalanche rating and dynamic dV/dt rating contribute to its ruggedness and reliability in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the IXTA26P20P is 200V.
The continuous drain current (Id) for the IXTA26P20P is 26A at 25°C case temperature.
The maximum Rds On for the IXTA26P20P is 170mOhm when tested at 13A drain current and 10V gate-source voltage.
The operating temperature range for the IXTA26P20P is -55°C to 175°C.
The IXTA26P20P MOSFET is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AA surface mount package.