IXTA18P10T The IXTA18P10T is a P-Channel MOSFET from IXYS, featuring a 100V drain-source voltage and 18A continuous drain current. It is housed in a surface-mount TO-263 package.
Mfr Part #:

IXTA18P10T

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXTA18P10T is a P-Channel MOSFET from IXYS, featuring a 100V drain-source voltage and 18A continuous drain current. It is housed in a surface-mount TO-263 package.
✓ Total Stock: 3,690 pcs
$ Price Range: $0.99

IXTA18P10T Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,690 pcs
3690 pcs On Request 1 On Request On Request On Request On Request On Request

IXTA18P10T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTA18P10T Description

Short technical summary and product information.

The IXTA18P10T is a P-Channel MOSFET manufactured by IXYS, designed for various electronic applications. It offers a maximum drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 18A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-state resistance (Rds On) of 120mOhm at 9A and 10V gate-source voltage, and a maximum gate threshold voltage (Vgs(th)) of 4.5V at 250µA. The device has a maximum gate-source voltage (Vgs) of ±15V and an input capacitance (Ciss) of 2100pF at 25V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 83W (Tc). It utilizes MOSFET (Metal Oxide) technology and is packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface-mount package, making it suitable for space-constrained designs.

 

Applications for this component include high-side switching, push-pull amplifiers, DC choppers, automatic test equipment, current regulators, and battery charger circuits.

IXTA18P10T Quick Information

Product Type: MOSFET
Canonical Name: IXTA18P10T P-Channel MOSFET
Subcategory: Single

IXTA18P10T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTA18P10T Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTA18P10T Features

  • P-Channel MOSFET technology
  • 100V drain-source voltage rating
  • 18A continuous drain current
  • Low Rds On at 120mOhm maximum
  • Surface mount TO-263 package

IXTA18P10T Applications

  • Suitable for high-side switching
  • Used in push-pull amplifier circuits
  • Applicable for DC choppers
  • Ideal for automatic test equipment
  • Used in current regulator circuits

IXTA18P10T FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IXTA18P10T?

The maximum drain-source voltage (Vdss) is 100 V.

What is the continuous drain current rating?

The continuous drain current (Id) is 18 A.

What is the maximum on-resistance (Rds On) for this MOSFET?

The Rds On is a maximum of 120 mOhm at 9A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the IXTA18P10T supplied in?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

Is the IXTA18P10T RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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