| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
241 pcs
|
241 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXTA02N250HV is a high-voltage N-Channel Power MOSFET. It is designed for applications requiring high blocking voltage, such as high voltage power supplies, capacitor discharge circuits, and pulse circuits.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 2500V and a continuous drain current (Id25) of 200mA at 25°C. The on-resistance (Rds(on)) is a maximum of 450 Ohms at 50mA and 10V gate drive. The device operates within a temperature range of -55°C to 150°C.
This MOSFET is housed in a TO-263AB surface-mount package, offering advantages such as easy mounting and space savings. The package type is TO-263-3, D²Pak (2 Leads + Tab).
Additional features include a fast intrinsic diode, low package inductance, and a maximum power dissipation of 83W at 25°C (Tc). The gate threshold voltage (Vgs(th)) is a maximum of 4.5V at 250µA.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 2500 V.
The continuous drain current (Id25) is 200 mA at 25°C.
The maximum Rds(on) is 450 Ohm at 50mA and 10V.
The operating temperature range is -55°C to 150°C.
It is supplied in a TO-263AB package.