| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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161 pcs
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161 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXSH40N60A from Littelfuse Inc. is a single Insulated Gate Bipolar Transistor (IGBT) designed for robust performance in demanding applications. This component features a high collector-emitter breakdown voltage of 600V and a maximum continuous collector current of 75A, with a pulsed current capability of up to 150A.
With a maximum power dissipation of 300W and a low on-state voltage (Vce(on)) of 3V at 15V gate-emitter voltage and 40A collector current, the IXSH40N60A is engineered for efficient power switching. Its switching energy is rated at 2.5mJ (off), and it exhibits typical turn-on and turn-off delay times of 55ns and 400ns, respectively, at 25°C.
The IGBT operates within a wide temperature range of -55°C to 150°C (TJ). It is housed in a TO-247-3 package and utilizes a through-hole mounting type, making it suitable for various industrial and power electronics designs. The gate charge is specified at 190nC.
This part is classified under the discrete semiconductor products category, specifically as a single IGBT transistor. Its specifications make it a viable option for power conversion, motor control, and other high-voltage, high-current applications where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-247-3.
-55°C to 150°C (junction).
75A continuous, 150A pulsed.
190nC.
300W.
Through hole.