| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,667 pcs
|
3667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,370 pcs
|
2370 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
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| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IXLF19N250A is a high-voltage NPT Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It offers a robust 2500V collector-emitter breakdown voltage and a continuous collector current rating of 32A, with a maximum power dissipation of 250W.
This IGBT is designed for through-hole mounting and comes in the i4-Pac™ package, specifically the i4-Pac™-5 variant with 3 leads. The device operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a Vce(on) of 3.9V at 15V/19A, a gate charge of 142 nC, and switching energy ratings of 15mJ (on) and 30mJ (off).
Its specifications make it suitable for various high-power switching applications where reliable voltage blocking and current handling are critical. The through-hole package facilitates integration into traditional PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 2500V.
The maximum continuous collector current (Ic) is 32A.
The maximum power dissipation for this IGBT is 250W.
The operating temperature range is -55°C to 150°C (TJ).
This IGBT is designed for through-hole mounting.
The package is i4-Pac™-5 (3 Leads).