IXKN75N60C The IXYS IXKN75N60C is a 600V N-Channel Power MOSFET designed for high-performance applications. It features a low RDS(on) and is housed in a SOT-227B miniBLOC package.
Mfr Part #:

IXKN75N60C

Available from 2 distributors
Mfr Name: IXYS
IXYS
The IXYS IXKN75N60C is a 600V N-Channel Power MOSFET designed for high-performance applications. It features a low RDS(on) and is housed in a SOT-227B miniBLOC package.
Total Stock: 1,422 pcs
$ Price Range: $0.99

IXKN75N60C Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,414 pcs
1414 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
8 pcs
8 pcs On Request 1 On Request On Request On Request On Request On Request

IXKN75N60C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Td (on
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXKN75N60C Description

Short technical summary and product information.

The IXYS IXKN75N60C is a 3rd generation CoolMOS™ N-Channel Power MOSFET with a high blocking capability and low on-resistance. It offers a maximum drain-source voltage (VDSS) of 600V and a continuous drain current (ID25) of 75A.

 

This MOSFET features a low RDS(on) of 36mOhm at 50A and 10V gate drive, along with a gate charge (Qg) of 500 nC. It is avalanche rated for unclamped inductive switching (UIS) and has a low thermal resistance (RthJC) of 0.22 K/W, contributing to enhanced total power density.

 

The component is housed in the SOT-227B, miniBLOC package, which provides an electrically isolated copper base and is suitable for chassis mounting. This package type facilitates easy screw assembly and offers reduced coupling capacitance to the heatsink for lower EMI.

 

Applications for the IXKN75N60C include switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), power factor correction (PFC), welding, and inductive heating.

IXKN75N60C Quick Information

Product Type: Power MOSFET
Series: 3rd generation
Canonical Name: IXYS IXKN75N60C N-Channel Power MOSFET
Subcategory: N-Channel

IXKN75N60C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXKN75N60C Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXKN75N60C Features

  • 600V drain-source voltage rating.
  • 75A continuous drain current.
  • Low 36mOhm on-resistance.
  • SOT-227B miniBLOC package.
  • Avalanche rated for UIS.

IXKN75N60C Applications

  • Suitable for SMPS applications.
  • Used in uninterruptible power supplies.
  • Ideal for power factor correction.
  • Applicable for welding equipment.
  • Used in inductive heating systems.

IXKN75N60C FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IXKN75N60C?

The maximum drain-source voltage (VDSS) for the IXKN75N60C is 600V.

What is the continuous drain current rating of the IXKN75N60C?

The continuous drain current rating (ID25) for the IXKN75N60C is 75A at 25°C.

What is the on-resistance (RDSon) of the IXKN75N60C?

The maximum on-resistance (RDSon) for the IXKN75N60C is 36mOhm when measured at 50A drain current and 10V gate-source voltage.

What type of package does the IXKN75N60C use?

The IXKN75N60C is supplied in the SOT-227B, miniBLOC package.

What is the operating temperature range for the IXKN75N60C?

The operating temperature range (TJ) for the IXKN75N60C is -40°C to 150°C.

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