IXKN45N80C The IXYS IXKN45N80C is an N-Channel MOSFET with a high 800V drain-source voltage and 44A continuous drain current. It features low on-resistance and is housed in a SOT-227B package.
Mfr Part #:

IXKN45N80C

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXYS IXKN45N80C is an N-Channel MOSFET with a high 800V drain-source voltage and 44A continuous drain current. It features low on-resistance and is housed in a SOT-227B package.
Total Stock: 4,000 pcs
$ Price Range: $0.99

IXKN45N80C Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request

IXKN45N80C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXKN45N80C Description

Short technical summary and product information.

This IXYS IXKN45N80C is an N-Channel MOSFET designed for power applications. It offers a robust 800V drain-to-source voltage (Vdss) and can handle a continuous drain current of 44A at 25°C case temperature.

 

The MOSFET exhibits a maximum on-resistance (Rds On) of 74mOhm at 44A and 10V gate drive voltage. The gate charge (Qg) is specified at a maximum of 360nC at 10V. Its threshold voltage (Vgs(th)) is a maximum of 3.9V at 4mA, with a maximum gate-source voltage (Vgs Max) of ±20V.

 

With a maximum power dissipation of 380W (Tc), this device operates across a wide temperature range from -55°C to 150°C (TJ). The technology employed is MOSFET (Metal Oxide). It is supplied in a SOT-227B package, suitable for chassis mounting.

 

Compliance includes RoHS3 status. The component is designed for applications requiring high voltage and current handling capabilities within a compact form factor.

IXKN45N80C Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXKN45N80C N-Channel MOSFET
Subcategory: N-Channel

IXKN45N80C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXKN45N80C Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXKN45N80C Features

  • 800V drain-source voltage capability.
  • 44A continuous drain current rating.
  • Low 74mOhm on-resistance.
  • Wide -55°C to 150°C operating temperature.
  • SOT-227B chassis mount package.

IXKN45N80C Applications

  • Suitable for high voltage power circuits.
  • Used in power switching applications.
  • Ideal for industrial control systems.
  • Applicable in power supply designs.

IXKN45N80C FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IXKN45N80C?

The maximum drain-source voltage (Vdss) for the IXKN45N80C is 800 V.

What is the continuous drain current of the IXKN45N80C?

The continuous drain current (Id) for the IXKN45N80C is 44A at 25°C case temperature.

What is the on-resistance of the IXKN45N80C?

The maximum on-resistance (Rds On) for the IXKN45N80C is 74mOhm when measured at 44A drain current and 10V gate drive voltage.

What is the operating temperature range for this MOSFET?

The IXKN45N80C operates between -55°C and 150°C (TJ).

What package type is the IXKN45N80C supplied in?

This MOSFET is supplied in a SOT-227B package, also referred to as SOT-227-4, miniBLOC.

How is the IXKN45N80C mounted?

The IXKN45N80C is designed for chassis mounting.

Home
Account

Categories