| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,713 pcs
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4713 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXYS IXGT72N60A3 is a 600V, 75A PT IGBT (Insulated Gate Bipolar Transistor) from the GenX3TM family, optimized for applications requiring low conduction losses and high power density.
This device offers a continuous collector current of 75A at 25°C and a maximum power dissipation of 540W at 25°C. Key electrical characteristics include a gate threshold voltage typically around 3.0V and a low collector-emitter saturation voltage of 1.35V at 15V gate-emitter voltage and 60A collector current. Switching characteristics include a turn-on delay of 31ns and a turn-off delay of 320ns, with associated switching energies.
The IGBT operates within a temperature range of -55°C to 150°C (TJ) and is packaged in a surface-mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA format. Its robust design and performance make it suitable for various power electronics applications.
Applications for the IXGT72N60A3 include power inverters, UPS systems, motor drives, SMPS, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protection circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 600V.
The maximum continuous collector current is 75A at 25°C and 72A at 110°C.
It comes in a TO-268 (D³Pak) surface-mount package.
The maximum junction temperature is 150°C.
Yes, it is RoHS3 compliant.