| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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136 pcs
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136 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXYS IXGT6N170 is a high voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features a maximum collector-emitter voltage (VCES) of 1700V and a continuous collector current (IC90) of 6A, with a peak current capability of 24A.
This IGBT offers a power dissipation of 75W at 25°C and operates within a temperature range of -55°C to 150°C. The device has a typical gate threshold voltage (VGE(th)) of 3.0V and a low gate charge of 20 nC, facilitating easier drive requirements. Its saturation voltage (VCE(sat)) is a maximum of 4.0V at 15V gate drive and 6A collector current.
Packaged in a TO-268AA surface mount configuration, the IXGT6N170 is suitable for applications requiring high power density and robust performance. Key electrical characteristics include a turn-on delay time of 40ns and a turn-off delay time of 250ns, with a switching energy (Eoff) of 1.5mJ.
Applications for the IXGT6N170 include capacitor discharge circuits, uninterruptible power supplies (UPS), motor drives, DC servo drives, DC choppers, and switched-mode power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) for the IXGT6N170 is 1700V.
The continuous collector current rating at 90°C (IC90) is 6A.
The maximum power dissipation (PC) at 25°C is 75W.
The operating temperature range (TJ) is -55°C to 150°C.
The IXGT6N170 is supplied in a TO-268AA surface mount package.