| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
148 pcs
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148 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXGT32N170 is an insulated-gate bipolar transistor (IGBT) manufactured by IXYS. It features a voltage rating of 1700V, a continuous current of 75A, and a power dissipation of 350W. The device is packaged in a TO268 form factor, designed for high-voltage switching and power conversion applications. Its electrical characteristics include a typical collector-emitter saturation voltage of 3.3V at Vge and Ic conditions of 15V and 32A. The device operates over a temperature range from -55°C to 150°C, making it suitable for demanding thermal environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage of the IXGT32N170 is 1700 V.
The maximum collector current is 75 A.
The power dissipation is 350 W.
It operates from -55°C to 150°C.
The typical Vce(on) is 3.3V at 15V Vge and 32A Ic.