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46 pcs
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46 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The IXGT10N170A is a High Voltage Insulated Gate Bipolar Transistor (IGBT) from IXYS, designed for demanding applications. It offers a maximum Collector Emitter Voltage of 1.7kV and a maximum Collector Current of 10A, making it suitable for high-power switching.
This IGBT is packaged in a TO-268 surface mount case, facilitating integration into various electronic designs. It has a maximum power dissipation rating of 140W and operates within a temperature range of -55°C to 150°C. The device's specifications indicate robust performance for power electronics circuits.
Key electrical parameters include a Collector Emitter Saturation Voltage of 6V. The component's environmental compliance is listed as RoHS3 Compliant, with an MSL rating of 1 Unlimited and REACH Unaffected status. These attributes are important considerations for design and manufacturing processes.
The maximum Collector Emitter Voltage for the IXGT10N170A is 1.7kV.
The maximum Collector Current for the IXGT10N170A is 10A.
The maximum power dissipation for the IXGT10N170A is 140W.
The operating temperature range for the IXGT10N170A is -55°C to 150°C.
The IXGT10N170A is available in a TO-268 package.
The mounting type for the IXGT10N170A is Surface Mount.