IXGT10N170A The IXGT10N170A is a High Voltage IGBT manufactured by IXYS. It features a 1.7kV Collector Emitter Voltage and is housed in a TO-268 surface mount package.
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IXGT10N170A

Available from 1 distributors
Mfr Name: IXY
IXY
The IXGT10N170A is a High Voltage IGBT manufactured by IXYS. It features a 1.7kV Collector Emitter Voltage and is housed in a TO-268 surface mount package.
✓ Total Stock: 46 pcs

IXGT10N170A Available from 1 distributor

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IXGT10N170A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IXGT10N170A Description

Short technical summary and product information.

The IXGT10N170A is a High Voltage Insulated Gate Bipolar Transistor (IGBT) from IXYS, designed for demanding applications. It offers a maximum Collector Emitter Voltage of 1.7kV and a maximum Collector Current of 10A, making it suitable for high-power switching.

 

This IGBT is packaged in a TO-268 surface mount case, facilitating integration into various electronic designs. It has a maximum power dissipation rating of 140W and operates within a temperature range of -55°C to 150°C. The device's specifications indicate robust performance for power electronics circuits.

 

Key electrical parameters include a Collector Emitter Saturation Voltage of 6V. The component's environmental compliance is listed as RoHS3 Compliant, with an MSL rating of 1 Unlimited and REACH Unaffected status. These attributes are important considerations for design and manufacturing processes.

IXGT10N170A Quick Information

Product Type: IGBT Transistor
Series: IXGT
Canonical Name: IXGT10N170A High Voltage IGBT
Subcategory: Transistors - IGBTs - Single

IXGT10N170A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXGT10N170A Features

  • High Voltage IGBT by IXYS.
  • 1.7kV Collector Emitter Voltage rating.
  • 10A maximum collector current.
  • 140W maximum power dissipation.
  • TO-268 surface mount package.

IXGT10N170A Applications

  • High voltage switching power supplies
  • Solar inverter boost stage circuits
  • Induction heating power converters
  • Motor drive inverter modules
  • High voltage DC-DC converter stages

IXGT10N170A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Collector Emitter Voltage for the IXGT10N170A?

The maximum Collector Emitter Voltage for the IXGT10N170A is 1.7kV.

What is the maximum Collector Current of the IXGT10N170A?

The maximum Collector Current for the IXGT10N170A is 10A.

What is the maximum power dissipation for the IXGT10N170A?

The maximum power dissipation for the IXGT10N170A is 140W.

What is the operating temperature range of the IXGT10N170A?

The operating temperature range for the IXGT10N170A is -55°C to 150°C.

What package type is the IXGT10N170A available in?

The IXGT10N170A is available in a TO-268 package.

What is the mounting type for the IXGT10N170A?

The mounting type for the IXGT10N170A is Surface Mount.

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