| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,581 pcs
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2581 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXYS IXGR40N60C2D1 is a single N-Channel IGBT transistor designed for power switching applications. It features a collector-emitter breakdown voltage of 600V and a continuous collector current of 56A.
Key electrical specifications include a maximum power dissipation of 170W and a reverse recovery time of 25 ns. The operating temperature range is from -55°C to 150°C (TJ), making it suitable for demanding environments. The transistor is supplied in an ISOPLUS247 package with through-hole mounting.
This component is RoHS3 compliant and lead-free. Its robust design and specifications make it a reliable choice for various industrial and power electronics applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 600 V.
The continuous collector current is 56 A.
The maximum power dissipation is 170 W.
The operating temperature range is -55°C to 150°C.
This IGBT transistor is in the ISOPLUS247 package.
This component is mounted using the through-hole method.
The reverse recovery time is 25 ns.