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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXGQ200N30PB is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It is designed for high-power applications, offering a robust 300V collector-emitter breakdown voltage and a substantial 400A maximum collector current.
This IGBT features a standard input type, facilitating integration into various power electronic circuits. It is housed in a TO-3P package, which is suitable for through-hole mounting, ensuring secure and reliable assembly on printed circuit boards or heat sinks.
The component's specifications make it suitable for applications requiring high current handling and voltage blocking capabilities. Its design emphasizes performance and reliability in power conversion and control systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 300 V.
The maximum continuous collector current is 400 A.
It features a standard gate input type.
The component is supplied in a TO-3P package.
It is designed for through-hole mounting.