IXGH60N60B2 The IXYS IXGH60N60B2 is a PT IGBT with a 600V breakdown voltage and 75A collector current. It is housed in a TO-247 package.
Mfr Part #:

IXGH60N60B2

Available from 2 distributors
Mfr Name: IXYS
IXYS
The IXYS IXGH60N60B2 is a PT IGBT with a 600V breakdown voltage and 75A collector current. It is housed in a TO-247 package.
Total Stock: 31 pcs
$ Price Range: $0.99

IXGH60N60B2 Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
26 pcs
26 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
5 pcs
5 pcs On Request 1 On Request On Request On Request On Request On Request

IXGH60N60B2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Power - Max
Supplier Device Package
Switching Energy
Td (on
Td (on/off)
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
Voltage - Collector Emitter Breakdown (Max)

IXGH60N60B2 Description

Short technical summary and product information.

The IXYS IXGH60N60B2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 75A, with a pulsed capability of up to 300A.

 

This IGBT offers a maximum power dissipation of 500W and a low on-state voltage (Vce(on)) of 1.8V at 15V gate-emitter voltage and 50A collector current. The switching characteristics include a gate charge of 170nC and typical on/off times of 28ns/160ns at 25°C, with a switching energy of 1mJ (off).

 

Designed for through-hole mounting, the IXGH60N60B2 comes in a TO-247-3 package, also known as TO-247AD. It operates within a temperature range of -55°C to 150°C (TJ). The standard gate input type ensures compatibility with common drive circuits.

IXGH60N60B2 Quick Information

Product Type: IGBT
Series: HiPerFAST™
Canonical Name: IXGH60N60B2 PT IGBT
Subcategory: Single IGBTs

IXGH60N60B2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXGH60N60B2 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXGH60N60B2 Features

  • 600V collector-emitter breakdown voltage.
  • 75A continuous collector current.
  • 500W maximum power dissipation.
  • Low 1.8V Vce(on) maximum.
  • TO-247 package for through-hole mounting.

IXGH60N60B2 Applications

  • Suitable for high-voltage power circuits.
  • Ideal for switching power supply designs.
  • Used in motor control applications.
  • Applicable in industrial power systems.

IXGH60N60B2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the IXGH60N60B2?

The maximum collector-emitter breakdown voltage is 600V.

What is the continuous collector current rating?

The continuous collector current (Ic) is rated at a maximum of 75A.

What is the maximum power dissipation for this IGBT?

The maximum power dissipation is 500W.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the IXGH60N60B2 supplied in?

It is supplied in a TO-247-3 package, also known as TO-247AD.

How is the IXGH60N60B2 mounted?

It is designed for through-hole mounting.

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