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IXGH32N60AU1 IXYS IXGH32N60AU1 is a 600V, 60A HiPerFAST IGBT in a TO-247AD package, featuring low Vce(sat) of 2.9V and fast switching.
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IXGH32N60AU1

Available from 1 distributors
Mfr Name: IXYS
IXYS
IXYS IXGH32N60AU1 is a 600V, 60A HiPerFAST IGBT in a TO-247AD package, featuring low Vce(sat) of 2.9V and fast switching.
✓ Total Stock: 6 pcs

IXGH32N60AU1 Available from 1 distributor

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IXGH32N60AU1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
Weight
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IXGH32N60AU1 Description

Short technical summary and product information.

The IXYS IXGH32N60AU1 is a HiPerFAST IGBT designed for high-frequency power switching applications. It features a collector-emitter voltage rating of 600V and a continuous collector current of 60A at 25°C case temperature (32A at 90°C). The device offers a low saturation voltage of 2.9V typical at 32A and 15V gate drive, contributing to reduced conduction losses.

 

Switching performance is characterized by a turn-on delay time of 25ns, turn-off delay of 120ns, and a fall time of 125ns. The total gate charge is 125nC, enabling efficient gate drive design. The IGBT includes an antiparallel fast recovery diode (FRED) for freewheeling applications.

 

Packaged in a TO-247AD (TO-247-3) through-hole package, the device weighs 6g and supports a mounting torque of 1.13 Nm. The junction temperature range is -55°C to +150°C, with a maximum power dissipation of 200W at 25°C case temperature.

 

Typical applications include AC motor speed control, DC servo and robot drives, DC choppers, uninterruptible power supplies (UPS), and switched-mode power supplies. The device is suitable for surface mounting in the SMD variant (IXGH32N60AU1S).

IXGH32N60AU1 Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)
Canonical Name: IXYS IXGH32N60AU1 HiPerFAST IGBT, 600V, 60A, TO-247AD
Subcategory: Single IGBT

IXGH32N60AU1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXGH32N60AU1 Features

  • 600V collector-emitter voltage rating.
  • 60A continuous collector current at 25°C.
  • Low Vce(sat) of 2.9V typical.
  • Fast switching with 125ns fall time.
  • TO-247AD through-hole package.

IXGH32N60AU1 Applications

  • AC motor speed control applications.
  • DC servo and robot drives.
  • Uninterruptible power supplies (UPS).
  • Switched-mode power supplies.

IXGH32N60AU1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCES) is 600V.

What is the continuous collector current rating?

The continuous collector current is 60A at 25°C case temperature and 32A at 90°C.

What is the power dissipation?

The maximum power dissipation is 200W at 25°C case temperature.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to +150°C.

What package is this IGBT available in?

The device is available in a TO-247-3 package (TO-247AD) with through-hole mounting.

Is this device RoHS compliant?

The device is listed as RoHS3 compliant, but this is unverified from official sources.

What is the typical gate charge?

The typical gate charge is 125nC.

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