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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6 pcs
|
6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Emitter Cutoff Current (ICES) (Maximum @ Vce=0.8*Vces, Tj=125 °C) | |
| Collector-Emitter Cutoff Current (ICES) (Maximum @ Vce=0.8*Vces, Tj=25 °C) | |
| Collector-Emitter Voltage (VCES) | |
| Continuous Collector Current (Ic90 @ 90°C) | |
| Current | |
| Fall Time (tfi) | |
| Gate Charge | |
| Gate-Emitter Leakage Current (IGES) (Vge=±20V) | |
| Gate-Emitter Threshold Voltage (Vge(th)) (Ic=250µA, Vce=Vge) | |
| Gate-Emitter Voltage (Vges) - Continuous | |
| Gate-Emitter Voltage (Vges) - Transient | |
| Input Type | |
| Junction Temperature (Tj) Maximum | |
| Lead Pitch | |
| Lead Solder Temperature (Maximum) (1.6mm from case for 10s) | |
| Mounting Torque | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Pulsed Collector Current (ICM) (Tc=25°C, 1 ms) | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time (td(off)) (480V, 32A, 4.7 Ohm, 15V) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| Weight |
The IXYS IXGH32N60AU1 is a HiPerFAST IGBT designed for high-frequency power switching applications. It features a collector-emitter voltage rating of 600V and a continuous collector current of 60A at 25°C case temperature (32A at 90°C). The device offers a low saturation voltage of 2.9V typical at 32A and 15V gate drive, contributing to reduced conduction losses.
Switching performance is characterized by a turn-on delay time of 25ns, turn-off delay of 120ns, and a fall time of 125ns. The total gate charge is 125nC, enabling efficient gate drive design. The IGBT includes an antiparallel fast recovery diode (FRED) for freewheeling applications.
Packaged in a TO-247AD (TO-247-3) through-hole package, the device weighs 6g and supports a mounting torque of 1.13 Nm. The junction temperature range is -55°C to +150°C, with a maximum power dissipation of 200W at 25°C case temperature.
Typical applications include AC motor speed control, DC servo and robot drives, DC choppers, uninterruptible power supplies (UPS), and switched-mode power supplies. The device is suitable for surface mounting in the SMD variant (IXGH32N60AU1S).
The maximum collector-emitter voltage (VCES) is 600V.
The continuous collector current is 60A at 25°C case temperature and 32A at 90°C.
The maximum power dissipation is 200W at 25°C case temperature.
The operating junction temperature range is -55°C to +150°C.
The device is available in a TO-247-3 package (TO-247AD) with through-hole mounting.
The device is listed as RoHS3 compliant, but this is unverified from official sources.
The typical gate charge is 125nC.