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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IXGH20N120B is a discrete IGBT (Insulated Gate Bipolar Transistor) manufactured by IXYS. It features a collector-emitter breakdown voltage of 1200V, continuous collector current rating of 40A, and maximum power dissipation of 190W.
This device utilizes Punch Through (PT) technology for optimized switching performance. It has a typical total gate charge of 72 nC and switching times: turn-on delay 25 ns, turn-off delay 150 ns under test conditions (960V, 20A, 10 Ohm, 15V). The collector-emitter saturation voltage is typically 3.4V at 15V gate voltage and 20A collector current.
The IGBT is housed in a TO-247-3 (TO-247AD) package and is designed for through-hole mounting. It operates over a junction temperature range of -55°C to 150°C. The device is RoHS3 compliant and has an MSL of 1 (unlimited).
The combination of high voltage and current rating makes it suitable for power switching applications such as motor drives, uninterruptible power supplies (UPS), and induction heating.
The maximum collector-emitter breakdown voltage is 1200 V.
The package is TO-247-3 (TO-247AD) with through-hole mounting.
The junction temperature range is -55°C to 150°C.
The device is marked as RoHS3 compliant, but this data is unverified.
The maximum continuous collector current is 40 A.
The maximum power dissipation is 190 W.
It is a Punch Through (PT) IGBT.