IXFX64N60P3 IXFX64N60P3 is an N-Channel power MOSFET from IXYS with a 600V drain-source breakdown voltage and 64A continuous drain current. It features a low on-resistance of 95mOhm at 32A and comes in a through-hole PLUS247-3 package.
Mfr Part #:

IXFX64N60P3

Available from 1 distributors
Mfr Name: IXYS
IXYS
IXFX64N60P3 is an N-Channel power MOSFET from IXYS with a 600V drain-source breakdown voltage and 64A continuous drain current. It features a low on-resistance of 95mOhm at 32A and comes in a through-hole PLUS247-3 package.
Total Stock: 718 pcs
$ Price Range: $10.82 - $16.85

IXFX64N60P3 Available from 1 distributor

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718 pcs
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IXFX64N60P3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFX64N60P3 Description

Short technical summary and product information.

The IXFX64N60P3 is a high-voltage N-Channel power MOSFET designed and manufactured by IXYS. It is rated for a maximum drain-to-source voltage of 600V and can handle a continuous drain current of 64A at case temperature (Tc). This device offers a low on-resistance of 95mOhm when driven at 10V gate voltage and 32A drain current, enabling efficient power conversion.

 

Typical gate charge is 145 nC at 10V, and input capacitance is 9900 pF at 25V drain-source. The gate threshold voltage is 5V max at 4mA drain current. The maximum power dissipation is 1130W at case temperature, and the device can operate over a junction temperature range of -55°C to +150°C.

 

The MOSFET is offered in a through-hole TO-247-3 variant package (designated PLUS247-3) suitable for high-power applications requiring mechanical stability and thermal performance. Its high current and voltage ratings make it a candidate for motor drives, power supplies, and inverters.

IXFX64N60P3 Quick Information

Product Type: Power MOSFET
Canonical Name: N-Channel Power MOSFET, 600V, 64A, TO-247-3 (PLUS247-3)
Subcategory: Single MOSFETs

IXFX64N60P3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFX64N60P3 Estimated Pricing

Qty Low High
1+ $16.85 $16.85
10+ $10.82 $10.82

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFX64N60P3 Features

  • 600V drain-source breakdown voltage rating.
  • 64A continuous drain current at Tc.
  • Low on-resistance of 95mOhm at 32A.
  • PLUS247-3 through-hole package for high power.
  • Operating junction temperature range -55°C to +150°C.

IXFX64N60P3 Applications

  • High-voltage power supply designs.
  • Motor drive and inverter circuits.
  • DC-DC converters and switching regulators.
  • Industrial power control and automation.
  • Uninterruptible power supply (UPS) systems.

IXFX64N60P3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IXFX64N60P3?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current rating of this MOSFET?

The continuous drain current is 64A at case temperature (Tc).

What is the on-resistance (Rds(on)) of the IXFX64N60P3?

The maximum on-resistance is 95 milliohms at a drain current of 32A and a gate-source voltage of 10V.

What package does the IXFX64N60P3 come in?

It is supplied in a through-hole TO-247-3 variant package, specifically the PLUS247-3.

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to +150°C.

Is the IXFX64N60P3 RoHS compliant?

RoHS3 compliance is indicated but unverified.

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