IXFX55N50 The IXFX55N50 is an N-Channel MOSFET from IXYS. It features a 500V drain-source voltage, 55A continuous drain current, and a low on-resistance of 80mOhm.
Mfr Part #:

IXFX55N50

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXFX55N50 is an N-Channel MOSFET from IXYS. It features a 500V drain-source voltage, 55A continuous drain current, and a low on-resistance of 80mOhm.
Total Stock: 11 pcs
$ Price Range: $14.18

IXFX55N50 Available from 1 distributor

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IXFX55N50 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFX55N50 Description

Short technical summary and product information.

The IXFX55N50 is a high-voltage N-channel power MOSFET manufactured by IXYS. It is designed for applications requiring efficient switching and high current handling in demanding power conversion systems.

 

Key electrical characteristics include a drain-to-source voltage rating of 500V and a continuous drain current of 55A at 25°C case temperature. The device offers a maximum on-resistance of 80mOhm when driven with a 10V gate-source voltage. Gate threshold voltage is 4.5V maximum at 8mA drain current. Gate charge is 330nC at 10V, and input capacitance is 9400pF at 25V drain-source voltage, indicating moderate switching speed suitable for hard-switching topologies.

 

The IXFX55N50 is housed in a TO-247-3 variant package (PLUS247-3) with through-hole mounting, enabling robust thermal and mechanical performance. It can dissipate up to 625W at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C.

 

This MOSFET is suitable for use in high-voltage power supplies, motor drives, inverters, and DC-DC converters. Designers should ensure gate drive voltage of at least 10V to achieve minimum Rds(on) and respect the ±20V maximum gate-source voltage limit.

IXFX55N50 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: IXYS IXFX55N50 N-Channel MOSFET 500V 55A
Subcategory: Single MOSFET

IXFX55N50 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFX55N50 Estimated Pricing

Qty Low High
30+ $14.18 $14.18

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFX55N50 Features

  • 500V drain-source voltage rating.
  • 55A continuous drain current at 25°C.
  • Low on-resistance of 80mOhm.
  • TO-247-3 through-hole package.
  • Operating temperature -55°C to 150°C.

IXFX55N50 Applications

  • High voltage power supply designs.
  • Motor drive and inverter circuits.
  • DC-DC converters and switching regulators.
  • Industrial power switching applications.
  • Uninterruptible power supply (UPS) systems.

IXFX55N50 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IXFX55N50?

The maximum drain-to-source voltage (Vdss) is 500V.

What is the continuous drain current rating of the IXFX55N50?

The continuous drain current is 55A at a case temperature of 25°C.

What package does the IXFX55N50 come in?

It comes in a TO-247-3 variant package (PLUS247-3) with through-hole mounting.

What is the operating temperature range of the IXFX55N50?

The junction operating temperature range is -55°C to 150°C.

Is the IXFX55N50 RoHS compliant?

Yes, it is marked as RoHS3 compliant, though this is unverified from the manufacturer.

What is the maximum power dissipation of the IXFX55N50?

The maximum power dissipation is 625W at a case temperature of 25°C.

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