IXFX32N50 N-Channel MOSFET rated at 500V drain-source voltage and 32A continuous drain current. Features low on-resistance of 150 mOhm at 15A and 10V gate drive.
Mfr Part #:

IXFX32N50

Available from 1 distributors
Mfr Name: IXYS
IXYS
N-Channel MOSFET rated at 500V drain-source voltage and 32A continuous drain current. Features low on-resistance of 150 mOhm at 15A and 10V gate drive.
Total Stock: 3,780 pcs

IXFX32N50 Available from 1 distributor

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IXFX32N50 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFX32N50 Description

Short technical summary and product information.

The IXFX32N50 is a high-voltage N-Channel MOSFET from IXYS, designed for demanding power switching and amplification applications. It features a drain-source voltage rating of 500V and a continuous drain current of 32A (at Tc). The device offers a maximum on-resistance of 150 mOhm at 15A drain current and 10V gate drive, ensuring efficient conduction with low power losses.

 

With a gate charge of 300 nC at 10V and an input capacitance of 5450 pF at 25V, the IXFX32N50 is optimized for moderate switching speeds, suitable for applications such as switch-mode power supplies, motor drives, and inverters. The maximum power dissipation is 360W at case temperature, and it operates over a junction temperature range of -55°C to 150°C.

 

The MOSFET is housed in a through-hole PLUS247-3 package, which is a variant of the TO-247-3 standard. The supplier device package is designated as PLUS247™-3, providing robust thermal performance and easy mounting on heatsinks. The device is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited). It is recommended for use in circuits requiring high voltage and current handling with low Rds(on).

IXFX32N50 Quick Information

Product Type: Power MOSFET
Canonical Name: IXFX32N50 N-Channel MOSFET 500V 32A
Subcategory: N-Channel MOSFET

IXFX32N50 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFX32N50 Features

  • N-Channel MOSFET rated for 500V operation.
  • Continuous drain current of 32A.
  • Low on-resistance of 150 mOhm.
  • High power dissipation up to 360W.
  • Through-hole PLUS247-3 package.

IXFX32N50 Applications

  • Switching power supplies and converters.
  • Motor drives and inverters.
  • High-voltage DC-DC converters.
  • Power factor correction circuits.
  • Uninterruptible power supplies.

IXFX32N50 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IXFX32N50?

The maximum drain-source voltage (Vdss) is 500V.

What is the continuous drain current rating?

The continuous drain current (Id) is 32A at Tc.

What is the on-resistance of the IXFX32N50?

The maximum on-resistance (Rds on) is 150 mOhm at Id=15A and Vgs=10V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the IXFX32N50 available in?

It is available in a through-hole TO-247-3 variant, specifically the PLUS247™-3 package.

Is the IXFX32N50 RoHS compliant?

It is listed as RoHS3 compliant, but this is unverified. Confirm with the manufacturer.

What is the gate charge of the IXFX32N50?

The maximum gate charge (Qg) is 300 nC at Vgs=10V.

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