| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,299 pcs
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1299 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXFX30N100Q2 is a high-voltage N-Channel power MOSFET from IXYS, part of the HiPerFET Q-Class series. It is designed for demanding applications requiring high blocking voltage and efficient switching. With a maximum drain-source voltage of 1000V and continuous drain current of 30A at 25°C, this device can handle significant power levels. The on-resistance is typically 400mOhm at VGS=10V and ID=15A, ensuring low conduction losses.
This MOSFET features a fast intrinsic rectifier with a reverse recovery time of 250ns and is avalanche rated for ruggedness. It includes a double metal gate process for low gate resistance, enabling fast switching. The gate charge is 186nC, and input capacitance is 8200pF, characteristics that are important for high-frequency power conversion designs.
The device is packaged in the industry-standard PLUS247-3 (TO-247 variant) through-hole package, with a weight of 6g. It is designed for easy mounting and high power density. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 735W at case temperature 25°C. Typical applications include power supplies, motor drives, and high-voltage switching circuits.
The maximum drain-source voltage (Vdss) is 1000V.
The operating junction temperature range is -55°C to 150°C.
The IXFX30N100Q2 is offered in a PLUS247-3 (TO-247 variant) through-hole package.
The IXFX30N100Q2 is listed as RoHS3 Compliant, but this information is unverified.
The typical gate charge (Qg) is 186 nC at VGS=10V.
The maximum on-resistance is 400 mOhm at VGS=10V and ID=15A.
The continuous drain current is 30A at case temperature 25°C.