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IXFX27N80Q IXFX27N80Q is an N-Channel MOSFET from IXYS with a drain-source voltage of 800V, continuous drain current of 27A, and low on-resistance of 320mOhm. It comes in a TO-247-3 (PLUS247-3) through-hole package.
Mfr Part #:

IXFX27N80Q

Available from 2 distributors
Mfr Name: IXYS
IXYS
IXFX27N80Q is an N-Channel MOSFET from IXYS with a drain-source voltage of 800V, continuous drain current of 27A, and low on-resistance of 320mOhm. It comes in a TO-247-3 (PLUS247-3) through-hole package.
✓ Total Stock: 32 pcs
$ Price Range: $22.54

IXFX27N80Q Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
30 pcs
On Request
30 pcs On Request 1 On Request On Request On Request On Request On Request
ACK ELEKTRONIK ✓
Non-Authorised Inventory information
2 pcs
On Request
2 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IXFX27N80Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IXFX27N80Q Description

Short technical summary and product information.

The IXFX27N80Q is an N-Channel enhancement-mode MOSFET designed and manufactured by IXYS. It features a maximum drain-source voltage of 800V and a continuous drain current of 27A. The on-resistance is specified at 320mOhm maximum under test conditions of 500mA drain current and 10V gate-source voltage. The gate charge is 170nC, and the input capacitance is 7600pF, enabling efficient switching performance. The device can dissipate up to 500W of power and operates over a junction temperature range of -55°C to 150°C. The MOSFET is housed in a through-hole TO-247-3 variant package, also referred to as PLUS247-3, and requires a 10V gate drive for optimal on-resistance. It is suitable for high-voltage switching applications such as power supplies, motor drives, and inverters.

IXFX27N80Q Quick Information

Product Type: Single MOSFET Transistor
Canonical Name: IXFX27N80Q N-Channel MOSFET
Subcategory: N-Channel MOSFET

IXFX27N80Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFX27N80Q Estimated Pricing

Qty Low High
300+ $22.54 $22.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFX27N80Q Features

  • High voltage rating of 800V.
  • Continuous drain current of 27A.
  • Low on-resistance of 320mOhm.
  • High power dissipation of 500W.
  • Through-hole PLUS247-3 package.

IXFX27N80Q Applications

  • High voltage power switching applications.
  • Power factor correction circuits.
  • Switching power supplies and inverters.
  • Industrial motor drives.

IXFX27N80Q FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IXFX27N80Q?

The maximum drain-source voltage is 800V.

What is the maximum continuous drain current?

The maximum continuous drain current is 27A at case temperature (Tc).

What is the package type of the IXFX27N80Q?

The package is a TO-247-3 Variant, also known as PLUS247-3.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the RoHS status of the IXFX27N80Q?

The RoHS status is RoHS3 Compliant, but this is unverified.

What is the gate threshold voltage?

The maximum gate threshold voltage is 4.5V at 4mA drain current.

What is the maximum power dissipation?

The maximum power dissipation is 500W at case temperature (Tc).

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