IXFX150N15 IXFX150N15 is a N-Channel power MOSFET from IXYS, rated for 150V drain-source voltage and 150A continuous drain current. It features a low on-resistance of 12.5 mOhm and comes in a PLUS247-3 through-hole package.
Mfr Part #:

IXFX150N15

Available from 1 distributors
Mfr Name: IXYS
IXYS
IXFX150N15 is a N-Channel power MOSFET from IXYS, rated for 150V drain-source voltage and 150A continuous drain current. It features a low on-resistance of 12.5 mOhm and comes in a PLUS247-3 through-hole package.
Total Stock: 500 pcs
$ Price Range: $11.13 - $12.20

IXFX150N15 Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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500 pcs
500 pcs On Request 1 On Request On Request 00+ On Request On Request

IXFX150N15 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFX150N15 Description

Short technical summary and product information.

The IXFX150N15 is a N-Channel power MOSFET from IXYS, designed for high-power switching applications. It has a drain-source breakdown voltage of 150V and a continuous drain current rating of 150A at a case temperature of 25°C. The device features a low on-resistance of 12.5 mOhm at a gate drive voltage of 10V and a drain current of 75A, which minimizes conduction losses in power circuits.

 

This MOSFET is built using the HiPerFET process, offering fast switching and ruggedness. It supports a maximum power dissipation of 560W and operates over a junction temperature range of -55°C to +150°C. The gate threshold voltage is between 2V and 4V at a drain current of 8mA, and the total gate charge is typically 360nC at VGS=10V. These parameters make it suitable for high-frequency switching and efficient power conversion.

 

The device is housed in a PLUS247-3 package (TO-247-3 variant) with through-hole mounting, providing excellent thermal performance and easy integration into power modules. It is designed for applications such as DC-DC converters, switched-mode power supplies, AC motor control, battery chargers, and temperature and lighting controls.

IXFX150N15 Quick Information

Product Type: Power MOSFET
Canonical Name: N-Channel Power MOSFET, 150V, 150A
Subcategory: Single MOSFET

IXFX150N15 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFX150N15 Estimated Pricing

Qty Low High
30+ $12.20 $12.20
120+ $12.19 $12.19
510+ $12.15 $12.15
1,020+ $11.13 $11.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFX150N15 Features

  • N-Channel MOSFET with 150V drain-source breakdown.
  • Continuous drain current rating of 150A.
  • Low on-resistance of 12.5 mOhm at 10V.
  • Maximum power dissipation of 560 watts.
  • Operates from -55°C to 150°C junction.

IXFX150N15 Applications

  • Suitable for DC-DC converter circuits.
  • Used in switched-mode power supplies.
  • Ideal for AC motor control applications.
  • Applied in battery charger designs.

IXFX150N15 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage (VDSS)?

150V.

What is the package type?

TO-247-3 variant (PLUS247-3) through-hole package.

What is the operating temperature range?

-55°C to +150°C (junction temperature).

Is this component RoHS compliant?

Yes, listed as RoHS3 compliant.

What is the on-resistance?

12.5 mOhm at 75A and 10V gate drive.

What is the gate threshold voltage?

2V to 4V at ID=8mA.

What is the maximum power dissipation?

560W at case temperature 25°C.

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