IXFX120N25P IXFX120N25P is an N-Channel MOSFET from IXYS, rated for 250V drain-source voltage and 120A continuous drain current. It features a low on-resistance of 24mOhm and comes in a TO-247-3 (PLUS247-3) through-hole package.
Mfr Part #:

IXFX120N25P

Available from 1 distributors
Mfr Name: IXYS
IXYS
IXFX120N25P is an N-Channel MOSFET from IXYS, rated for 250V drain-source voltage and 120A continuous drain current. It features a low on-resistance of 24mOhm and comes in a TO-247-3 (PLUS247-3) through-hole package.
Total Stock: 2 pcs
$ Price Range: $13.01 - $19.68

IXFX120N25P Available from 1 distributor

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IXFX120N25P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFX120N25P Description

Short technical summary and product information.

The IXFX120N25P is an N-Channel enhancement-mode power MOSFET manufactured by IXYS. It is designed for high-power switching applications requiring high voltage and current capability. The device is rated for a maximum drain-source voltage of 250V and a continuous drain current of 120A at case temperature (Tc). The typical on-resistance (Rds(on)) is 24mOhm maximum at a gate-source voltage of 10V and a drain current of 60A, ensuring low conduction losses.

 

The MOSFET has a maximum gate charge of 185nC at 10V and an input capacitance of 8000pF at 25V drain-source voltage, which are important for switching speed considerations. The gate threshold voltage is up to 5V at 4mA drain current, and the maximum gate-source voltage is ±20V.

 

The device is designed for through-hole mounting and is housed in a TO-247-3 variant package, specifically the PLUS247-3 package, which provides efficient heat dissipation. The maximum power dissipation is 700W at case temperature, and the operating junction temperature range is -55°C to 175°C.

IXFX120N25P Quick Information

Product Type: MOSFET
Canonical Name: IXFX120N25P N-Channel MOSFET, 250V, 120A, 24mOhm, TO-247-3 (PLUS247-3)
Subcategory: N-Channel Power MOSFET

IXFX120N25P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFX120N25P Estimated Pricing

Qty Low High
1+ $19.68 $19.68
10+ $13.37 $13.37
120+ $13.01 $13.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFX120N25P Features

  • N-Channel MOSFET rated for 250V drain-source voltage.
  • Continuous drain current of 120A at case temperature.
  • Low on-resistance of 24mOhm maximum at 10V gate drive.
  • Maximum power dissipation of 700W.
  • Through-hole mounting in TO-247-3 PLUS247-3 package.

IXFX120N25P Applications

  • High-power switching applications.
  • Motor control and inverter circuits.
  • Industrial power conversion systems.

IXFX120N25P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IXFX120N25P?

The IXFX120N25P has a maximum drain-source voltage of 250V.

What is the maximum continuous drain current?

The maximum continuous drain current is 120A at case temperature (Tc).

What is the on-resistance of the IXFX120N25P?

The maximum on-resistance is 24mOhm at a drain current of 60A and gate-source voltage of 10V.

What is the package type of the IXFX120N25P?

The IXFX120N25P is available in a TO-247-3 variant package, specifically the PLUS247-3 package, for through-hole mounting.

What is the operating temperature range of the IXFX120N25P?

The operating junction temperature range is -55°C to 175°C.

Is the IXFX120N25P RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.

What is the gate charge of this MOSFET?

The maximum gate charge is 185nC at a gate-source voltage of 10V.

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