| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFT40N85XHV is an N-Channel enhancement-mode MOSFET manufactured by IXYS. It is designed for high-voltage switching applications, with a maximum drain-source voltage of 850V and continuous drain current of 40A at case temperature Tc. The device can dissipate up to 860W, making it suitable for power conversion circuits.
Key electrical characteristics include a maximum gate-source voltage of ±30V, a gate threshold voltage of 5.5V at 4mA drain current, and a typical drive voltage of 10V for optimal on-resistance. The maximum drain-source on-resistance is 145 mOhm at 500mA and 10V gate drive. Input capacitance is 3700 pF at 25V Vds, and total gate charge is 98 nC at 10V.
The MOSFET is housed in a surface-mount TO-268HV package (also known as D³Pak), which is designed for high-voltage applications. The operating junction temperature range is -55°C to 150°C. The device is listed as RoHS3 compliant and has an MSL level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 300+ | $13.00 | $13.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
850V.
Surface-mount TO-268-3 (D³Pak) with supplier package TO-268HV.
-55°C to 150°C (junction).
The part is listed as RoHS3 Compliant.
98 nC at Vgs = 10V.
145 mOhm at 500mA and 10V gate drive.
3700 pF at Vds = 25V.