IXFT320N10T2 N-Channel power MOSFET from IXYS, rated for 100V drain-source voltage and 320A continuous drain current. Features low 3.5mΩ on-resistance and fast intrinsic diode in a TO-268 surface mount package.
Mfr Part #:

IXFT320N10T2

Available from 2 distributors
Mfr Name: IXYS
IXYS
N-Channel power MOSFET from IXYS, rated for 100V drain-source voltage and 320A continuous drain current. Features low 3.5mΩ on-resistance and fast intrinsic diode in a TO-268 surface mount package.
Total Stock: 48 pcs
$ Price Range: $16.21 - $25.74

IXFT320N10T2 Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
37 pcs
37 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
11 pcs
11 pcs On Request 1 On Request On Request On Request On Request On Request

IXFT320N10T2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFT320N10T2 Description

Short technical summary and product information.

The IXFT320N10T2 is an N-Channel power MOSFET from IXYS, utilizing TrenchT2 HiperFET technology. It is designed for high current switching applications with a drain-source breakdown voltage of 100V and a continuous drain current rating of 320A at 25°C case temperature. The device features a maximum on-resistance of 3.5mΩ at 100A gate drive of 10V, ensuring low conduction losses.

 

This MOSFET offers fast switching performance with typical gate charge of 430nC and input capacitance of 26000pF. The intrinsic diode is fast and avalanche-rated, with a reverse recovery time of 98ns. The device is capable of handling up to 1000W of power dissipation at 25°C case temperature.

 

It is housed in a TO-268 (D³Pak) surface mount package, which is suitable for high power density designs. The operating junction temperature range is -55°C to 175°C. This MOSFET is ideal for applications such as synchronous rectification, DC-DC converters, battery chargers, and motor drives.

IXFT320N10T2 Quick Information

Product Type: Power MOSFET
Series: Trench T2
Canonical Name: IXFT320N10T2 N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IXFT320N10T2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFT320N10T2 Estimated Pricing

Qty Low High
1+ $25.74 $25.74
10+ $18.79 $18.79
120+ $16.21 $16.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFT320N10T2 Features

  • Rated for 100V drain-source voltage.
  • Supports 320A continuous drain current.
  • Low on-resistance of 3.5mΩ typical.
  • Fast intrinsic diode for efficient switching.
  • Surface mount TO-268 package.

IXFT320N10T2 Applications

  • Used in synchronous rectification circuits.
  • Suitable for DC-DC converter designs.
  • Ideal for battery charger applications.
  • Employed in switch-mode power supplies.

IXFT320N10T2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

100V.

What package is the IXFT320N10T2 available in?

TO-268 (D³Pak) surface mount package.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is the IXFT320N10T2 RoHS compliant?

RoHS3 compliant (unverified).

What is the continuous drain current rating?

320A at 25°C case temperature.

What is the gate threshold voltage?

Maximum 4V at 250µA drain current.

What is the maximum power dissipation?

1000W at 25°C case temperature.

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