IXFT15N100Q3 IXFT15N100Q3 is an N-Channel enhancement mode power MOSFET from IXYS. It features a 1000V drain-source breakdown voltage, 15A continuous drain current, and a maximum on-resistance of 1.05Ω.
Mfr Part #:

IXFT15N100Q3

Available from 1 distributors
Mfr Name: IXYS
IXYS
IXFT15N100Q3 is an N-Channel enhancement mode power MOSFET from IXYS. It features a 1000V drain-source breakdown voltage, 15A continuous drain current, and a maximum on-resistance of 1.05Ω.
Total Stock: 24 pcs
$ Price Range: $16.59 - $23.98

IXFT15N100Q3 Available from 1 distributor

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IXFT15N100Q3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time (trr)
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

IXFT15N100Q3 Description

Short technical summary and product information.

The IXFT15N100Q3 is an N-Channel enhancement mode power MOSFET designed for high-voltage applications. It is rated for a drain-source voltage of 1000V and a continuous drain current of 15A at 25°C case temperature. The device features a low on-resistance of 1.05Ω maximum at VGS=10V and ID=7.5A, enabling efficient power switching.

 

The MOSFET offers a total gate charge of 64 nC and low capacitances (Ciss 3250 pF, Coss 265 pF, Crss 24 pF), contributing to reduced switching losses. It is avalanche rated with a single pulse energy of 1J and has a fast intrinsic rectifier with reverse recovery time of 250ns.

 

The IXFT15N100Q3 is packaged in the TO-268AA (D³Pak) surface mount package, suitable for automated assembly. It has an operating junction temperature range of -55°C to 150°C and a power dissipation of 690W at 25°C case temperature. Typical applications include DC-DC converters, battery chargers, switch-mode power supplies, and temperature control systems.

IXFT15N100Q3 Quick Information

Product Type: MOSFET
Series: Q3-Class
Canonical Name: IXFT15N100Q3 N-Channel MOSFET
Subcategory: N-Channel MOSFET

IXFT15N100Q3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IXFT15N100Q3 Estimated Pricing

Qty Low High
1+ $23.98 $23.98
10+ $19.20 $19.20
120+ $16.59 $16.59

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFT15N100Q3 Features

  • High drain-source breakdown voltage of 1000V.
  • Continuous drain current rating of 15A.
  • Low on-resistance of 1.05 ohms maximum.
  • Avalanche rated with 1 joule energy capability.
  • Fast intrinsic rectifier with 250ns recovery.

IXFT15N100Q3 Applications

  • Used in DC-DC converter circuits.
  • Suitable for battery charger systems.
  • Ideal for switch-mode power supplies.

IXFT15N100Q3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IXFT15N100Q3?

The IXFT15N100Q3 has a drain-source breakdown voltage of 1000V (minimum).

What package does the IXFT15N100Q3 come in?

The IXFT15N100Q3 is available in a TO-268AA (D³Pak) surface mount package.

What is the operating temperature range of the IXFT15N100Q3?

The operating junction temperature range is -55°C to 150°C.

Is the IXFT15N100Q3 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, though this information is unverified.

What is the on-resistance of the IXFT15N100Q3?

The maximum drain-source on-resistance is 1.05 ohms at VGS=10V and ID=7.5A.

What is the gate charge of the IXFT15N100Q3?

The total gate charge is 64 nC typical at VGS=10V.

What are typical applications for the IXFT15N100Q3?

Typical applications include DC-DC converters, battery chargers, switch-mode power supplies, DC choppers, and temperature controls.

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