| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,819 pcs
|
13819 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFT13N80Q is an N-Channel enhancement-mode MOSFET from IXYS, designed for high-voltage switching applications. Key electrical specifications include a maximum drain-to-source voltage of 800V, continuous drain current of 13A (at case temperature), and a maximum drain-to-source on-resistance of 700mOhm at 10V gate drive.
The device features a gate threshold voltage of 4.5V maximum, input capacitance of 3250pF at 25V, and total gate charge of 90nC at 10V. Maximum power dissipation is 250W at case temperature. It operates over a junction temperature range of -55°C to 150°C.
The MOSFET is housed in a TO-268AA surface-mount package (also known as D³Pak with 2 leads and tab). It is suitable for applications requiring high voltage and moderate current switching, such as power supplies, inverters, and motor controls.
| Qty | Low | High |
|---|---|---|
| 30+ | $10.88 | $10.88 |
| 120+ | $9.06 | $9.06 |
| 510+ | $8.07 | $8.07 |
| 1,020+ | $7.54 | $7.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 800V.
The maximum continuous drain current is 13A at case temperature.
The maximum drain-source on-resistance is 700mOhm at Id=6.5A and Vgs=10V.
The operating junction temperature range is -55°C to 150°C.
The device is supplied in a TO-268AA surface-mount package (D³Pak).
Yes, the device is marked as RoHS3 Compliant (unverified).
The total gate charge is 90nC maximum at Vgs=10V.