IXFR55N50 The IXFR55N50 is an N-Channel Power MOSFET from IXYS, rated at 500V drain-source voltage and 48A continuous drain current, housed in a through-hole ISOPLUS247 package.
Mfr Part #:

IXFR55N50

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXFR55N50 is an N-Channel Power MOSFET from IXYS, rated at 500V drain-source voltage and 48A continuous drain current, housed in a through-hole ISOPLUS247 package.
Total Stock: 50 pcs
$ Price Range: $20.96 - $25.60

IXFR55N50 Available from 1 distributor

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IXFR55N50 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFR55N50 Description

Short technical summary and product information.

The IXFR55N50 is an N-Channel enhancement-mode power MOSFET manufactured by IXYS, designed for high-voltage, high-current switching applications. It features a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 48A at case temperature (Tc). The device utilizes MOSFET (Metal Oxide) technology and offers a maximum drain-to-source on-resistance (Rds(on)) of 90 mOhm at Id = 27.5A and Vgs = 10V, ensuring efficient power conversion.

 

Key electrical characteristics include a maximum gate threshold voltage (Vgs(th)) of 4.5V at Id = 8mA, a maximum gate charge (Qg) of 330 nC at Vgs = 10V, and an input capacitance (Ciss) of 9400 pF at Vds = 25V. The device can dissipate up to 400W of power (at Tc) and operates over a junction temperature range of -40°C to 150°C.

 

The IXFR55N50 is packaged in a through-hole TO-247-3 (ISOPLUS247) case, suitable for direct mounting on heatsinks in power supply, motor control, and inverter circuits. Its high voltage rating and low on-resistance make it well-suited for demanding power management tasks.

IXFR55N50 Quick Information

Product Type: MOSFET
Canonical Name: IXFR55N50 N-Channel Power MOSFET
Subcategory: Single MOSFETs

IXFR55N50 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFR55N50 Estimated Pricing

Qty Low High
30+ $25.60 $25.60
120+ $22.13 $22.13
510+ $20.96 $20.96

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFR55N50 Features

  • N-Channel, 500V drain-to-source voltage.
  • 48A continuous drain current rating.
  • Low on-resistance of 90 mOhm.
  • Through-hole ISOPLUS247 package.
  • Operating temperature range -40°C to 150°C.

IXFR55N50 Applications

  • High-voltage DC-DC converter circuits.
  • Motor drive and inverter systems.
  • Switch-mode power supply designs.
  • Power factor correction (PFC) stages.

IXFR55N50 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IXFR55N50?

The maximum drain-to-source voltage is 500V.

What is the continuous drain current rating?

The continuous drain current is 48A at case temperature (Tc).

What is the typical on-resistance (Rds(on))?

Maximum Rds(on) is 90 mOhm at Id = 27.5A and Vgs = 10V.

What package does the IXFR55N50 come in?

It comes in a through-hole TO-247-3 package, also known as ISOPLUS247.

What is the operating temperature range?

The operating junction temperature range is -40°C to 150°C.

Is the IXFR55N50 RoHS compliant?

It is listed as RoHS3 Compliant, but this has not been independently verified.

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