| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,158 pcs
|
5158 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IXFR44N80P is an N-Channel enhancement-mode MOSFET manufactured by IXYS. It is designed for high-voltage applications and features a drain-source voltage rating of 800V and a continuous drain current of 25A. This device is built using MOSFET (Metal Oxide) technology.
Key electrical characteristics include a maximum on-resistance of 200 mOhm at a gate-source voltage of 10V and drain current of 22A. The gate charge is 200 nC at 10V, and input capacitance is 12000 pF at 25V. The threshold voltage is 5V at 8mA. The maximum gate-source voltage is ±30V.
The device is housed in a TO-247-3 package with the ISOPLUS247 supplier device package, offering through-hole mounting for reliable thermal and mechanical performance. Maximum power dissipation is 300W at case temperature, and the operating junction temperature range is -55°C to 150°C.
This MOSFET is suitable for high-efficiency power conversion circuits, including switch-mode power supplies, motor drives, and inverters where high voltage and current handling are required. Its robust design ensures reliable operation in demanding environments.
| Qty | Low | High |
|---|---|---|
| 300+ | $18.59 | $18.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-247-3 (ISOPLUS247 supplier device package).
-55°C to 150°C (junction).
RoHS3 Compliant (unverified).
200 mOhm maximum at 22A drain current and 10V gate-source voltage.
200 nC maximum at 10V gate-source voltage.
300W at case temperature.