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IXFQ50N60P3 N-Channel Power MOSFET, 600V drain-source voltage, 50A continuous drain current, TO-3P package.
Mfr Part #:

IXFQ50N60P3

Available from 1 distributors
Mfr Name: IXYS
IXYS
N-Channel Power MOSFET, 600V drain-source voltage, 50A continuous drain current, TO-3P package.
✓ Total Stock: 21 pcs
$ Price Range: $6.95 - $7.17

IXFQ50N60P3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
21 pcs
On Request
21 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IXFQ50N60P3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time (trr)
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
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IXFQ50N60P3 Description

Short technical summary and product information.

The IXFQ50N60P3 is an N-Channel enhancement mode power MOSFET from IXYS, part of the Polar3 HiperFET series. It features a drain-source breakdown voltage of 600V and continuous drain current of 50A at 25°C case temperature. The device offers a low on-resistance of 145mΩ maximum at VGS=10V and ID=25A. It is avalanche rated with an avalanche energy of 1J and has a fast intrinsic rectifier. The MOSFET is designed for high power switching applications such as switch-mode power supplies, DC-DC converters, and motor drives. It comes in a TO-3P through-hole package with a weight of 6.0g. The operating junction temperature range is -55°C to 150°C. The device is RoHS3 compliant and has an MSL level of 1 (unlimited).

IXFQ50N60P3 Quick Information

Product Type: Power MOSFET
Series: Polar3
Canonical Name: IXFQ50N60P3 N-Channel Power MOSFET, 600V, 50A, TO-3P
Subcategory: Single

IXFQ50N60P3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFQ50N60P3 Estimated Pricing

Qty Low High
300+ $7.17 $7.17
510+ $6.95 $6.95

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFQ50N60P3 Features

  • 600V drain-source breakdown voltage.
  • 50A continuous drain current at 25°C.
  • Low on-resistance of 145mΩ.
  • Avalanche rated with 1J energy.
  • Fast switching with low gate charge.

IXFQ50N60P3 Applications

  • Used in switch-mode power supplies.
  • Ideal for DC-DC converter designs.
  • Suitable for motor drive circuits.
  • Applied in laser driver systems.

IXFQ50N60P3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of IXFQ50N60P3?

600V minimum.

What is the continuous drain current rating?

50A at Tc=25°C.

What is the on-resistance?

145mΩ maximum at VGS=10V, ID=25A.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is the device available in?

TO-3P-3, SC-65-3 (TO-3P).

Is the device RoHS compliant?

RoHS3 Compliant (unverified).

What is the gate threshold voltage?

3V minimum, 5V maximum at ID=4mA.

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