| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXFP7N60P3 is a single N-Channel MOSFET manufactured by IXYS. It features a drain-to-source voltage rating of 600V and a continuous drain current of 7A (at Tc). The maximum on-state resistance is 1.15 ohm at a gate drive voltage of 10V and a current of 500mA. The device has a maximum gate charge of 13.3nC at 10V and an input capacitance of 705pF at 25V drain-source voltage.
This MOSFET is designed for high-voltage switching applications. With a maximum power dissipation of 180W (at Tc) and an operating junction temperature range from -55°C to 150°C, it is suitable for demanding power conversion circuits. The TO-220-3 through-hole package allows for easy mounting on a heatsink for thermal management.
The device is a Metal Oxide (MOSFET) technology N-Channel transistor, providing efficient switching performance. It is typically used in power supplies, motor drives, and other high-voltage switching circuits.
| Qty | Low | High |
|---|---|---|
| 50+ | $1.34 | $1.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-220-3 through-hole.
-55°C to 150°C (junction).
The part is listed as RoHS3 compliant in the existing database, but this is unverified.
7A at Tc.
1.15 ohm maximum at 500mA, 10V gate drive.
13.3 nC maximum at 10V gate-source voltage.