| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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34 pcs
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34 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFP72N20X3M is an N-channel power MOSFET manufactured by IXYS. It supports a drain-source breakdown voltage of 200V and a continuous drain current of 72A at case temperature, making it suitable for high-current switching applications. The device features a maximum drain-source on-resistance of 20mΩ at a drive voltage of 10V and a drain current of 36A.
This MOSFET operates over a junction temperature range of -55°C to 150°C and dissipates up to 36W at case temperature. It offers a maximum gate charge of 55nC at Vgs=10V and input capacitance of 3780pF at Vds=25V. The gate threshold voltage is 4.5V at Id=1.5mA, and the maximum gate-source voltage is ±20V.
The device is available in a TO-220-3 Full Pack package with an isolated tab and uses through-hole mounting. This package provides thermal and electrical isolation of the tab, which can simplify heatsinking and PCB layout. The MOSFET uses metal-oxide semiconductor technology.
Intended for power conversion and switching circuits where efficient high-voltage handling and low on-resistance are required, the IXFP72N20X3M combines robust electrical ratings with a through-hole package for ease of assembly.
| Qty | Low | High |
|---|---|---|
| 300+ | $5.97 | $5.97 |
| 500+ | $5.79 | $5.79 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 200V.
It is available in a TO-220-3 Full Pack package with isolated tab, using through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
The available data indicates RoHS3 compliance, though this is unverified against a datasheet.
The maximum on-resistance is 20mΩ at Vgs=10V and Id=36A.
The maximum continuous drain current is 72A at case temperature.
The maximum gate charge is 55nC at Vgs=10V.