| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFP4N85X is an N-Channel enhancement-mode MOSFET designed for high-voltage switching applications. It features a drain-source voltage rating of 850V and continuous drain current of 3.5A. The device offers a maximum on-resistance of 2.5 Ohms at Vgs=10V and Id=2A, with a gate charge of 7nC and input capacitance of 247pF. Power dissipation is rated at 150W. The MOSFET is housed in a TO-220AB through-hole package, suitable for easy mounting on heatsinks. Operating temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.01 | $6.01 |
| 10+ | $3.16 | $3.16 |
| 100+ | $2.87 | $2.87 |
| 500+ | $2.49 | $2.49 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
850V.
3.5A at case temperature.
Maximum 2.5 Ohms at Vgs=10V and Id=2A.
TO-220-3 (TO-220AB) through-hole package.
-55°C to 150°C junction temperature.
RoHS3 compliant (unverified).
7 nC at Vgs=10V.