| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
41 pcs
|
41 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFP4N100Q is an N-Channel enhancement-mode MOSFET from IXYS, designed for high-voltage switching applications. It features a drain-source voltage rating of 1000V and a continuous drain current of 4A at case temperature. The typical on-resistance is a maximum of 3 ohms at 2A and 10V gate drive. The gate charge is 39 nC at 10V, and input capacitance is 1050 pF at 25V. The device can dissipate up to 150W at case temperature. It operates over a junction temperature range of -55°C to 150°C.
The MOSFET is housed in a standard TO-220-3 through-hole package, suitable for easy mounting on heatsinks. The recommended gate drive voltage is 10V to achieve the specified on-resistance. The maximum gate threshold voltage is 5V at 1.5mA.
Applications include high-voltage power supplies, AC-DC converters, inverters, motor control circuits, and industrial power switching. Given its high voltage rating and moderate current capability, it is suitable for use in designs requiring robust switching performance.
| Qty | Low | High |
|---|---|---|
| 300+ | $5.39 | $5.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1000V.
4A at case temperature.
Maximum 3 ohms at 2A, 10V.
TO-220-3.
-55°C to 150°C (junction).
It is listed as RoHS3 Compliant, but this is unverified.
Maximum 39 nC at 10V.