Mfr Part #:

IXFP34N65X2

Mfr Name: IXYS

N-Channel MOSFET with 650V maximum drain-source voltage and 34A continuous drain current. Features 105mΩ on-resistance at 17A, 10V gate drive.

✓ Total Stock: 1,420 pcs

$ Price Range: $4.07 - $9.74

IXFP34N65X2 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	1,420 pcs On Request	1420 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IXFP34N65X2 Description

Short technical summary and product information.

The IXFP34N65X2 is an N-Channel enhancement-mode MOSFET from IXYS, designed for high-voltage switching applications. It features a maximum drain-source voltage of 650V and a continuous drain current of 34A at case temperature. The device offers a low on-resistance of 105mΩ maximum at 17A drain current and 10V gate-source voltage, enabling efficient power conversion.

With a maximum gate charge of 56nC at 10V and an input capacitance of 3330pF at 25V drain-source voltage, the MOSFET is suitable for moderate-speed switching circuits. The gate threshold voltage is 5.5V maximum at 2.5mA drain current, and the gate-source voltage rating is ±30V. Power dissipation is rated at 540W maximum at case temperature, and the device operates over a junction temperature range of -55°C to 150°C.

The MOSFET is housed in a TO-220-3 through-hole package, which allows for easy mounting on heatsinks. It is intended for use in power supplies, converters, motor drives, and other high-voltage circuits.

IXFP34N65X2 Quick Information

Product Type: MOSFET (Metal Oxide)

Series: Ultra Junction X2-Class

Canonical Name: IXFP34N65X2 N-Channel MOSFET, 650V, 34A, TO-220-3

Subcategory: Single N-Channel MOSFET

IXFP34N65X2 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IXFP34N65X2 Estimated Pricing

Qty	Low	High
1+	$9.74	$9.74
10+	$5.36	$5.36
100+	$4.93	$4.93
500+	$4.20	$4.20
1,000+	$4.07	$4.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFP34N65X2 Features

N-channel MOSFET with 650V drain-source rating.
34A continuous drain current capability.
Low 105mΩ on-resistance at 10V gate drive.
High 540W power dissipation at case temperature.
Through-hole TO-220-3 package for easy mounting.

IXFP34N65X2 Applications

Used in switching power supplies and converters.
Suitable for motor control circuits.
Ideal for high-voltage DC-DC converters.
Applied in power factor correction stages.
Used in industrial power systems.

IXFP34N65X2 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the IXFP34N65X2?

650V

What is the continuous drain current rating?

34A at case temperature

What is the on-resistance of the IXFP34N65X2?

105mΩ maximum at 17A drain current and 10V gate-source voltage

What is the package type of the IXFP34N65X2?

TO-220-3 (through-hole)

What is the operating temperature range?

-55°C to 150°C junction temperature

Is the IXFP34N65X2 RoHS compliant?

RoHS3 compliant per available data (unverified)

What is the gate charge of the IXFP34N65X2?

56nC maximum at 10V gate-source voltage

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	IXYS
Current	34 A (Tc)
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3330 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	540W (Tc)
Rds On (Max) @ Id, Vgs	105 mΩ @ 17A, 10V
Supplier Device Package	TO-220-3
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5.5V @ 2.5mA