| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36 pcs
|
36 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The IXFP22N65X2 is a 650V, 22A N-Channel enhancement-mode power MOSFET from IXYS' X2-Class HiPerFET family. Designed for high efficiency, it offers a low maximum on-resistance of 145mOhm (tested at VGS=10V, ID=11A) and a typical gate charge of 37nC, enabling fast switching in power conversion circuits. The device is avalanche rated with a single-pulse avalanche energy of 1J and an avalanche current of 5A. It includes a body diode with a reverse recovery time of 145ns and forward voltage of 1.4V.
This MOSFET is suited for switch-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is mounted in a standard TO-220-3 through-hole package with low inductance. The junction temperature range is -55°C to +150°C, with a maximum power dissipation of 390W at 25°C case temperature. Thermal resistance junction-to-case is 0.32°C/W, and mounting torque is 1.13N·m.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.57 | $7.57 |
| 10+ | $4.06 | $4.06 |
| 100+ | $3.52 | $3.52 |
| 500+ | $3.38 | $3.38 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 650V minimum.
It comes in a TO-220-3 (TO-220) through-hole package.
The junction temperature range is -55°C to +150°C.
The part is marked as RoHS3 compliant, but this status is unverified from official sources.
The gate threshold voltage (Vgs(th)) ranges from 3.5V to 5.0V, tested at VDS=VGS, ID=1.5mA.
The maximum drain-source on-resistance is 145mOhm at VGS=10V, ID=11A.
Typical gate charge (Qg) is 37nC at VGS=10V, VDS=325V, ID=11A.