IXFP22N65X2 The IXFP22N65X2 is an N-Channel power MOSFET from IXYS, rated for 650V drain-source voltage and 22A continuous current. It features low on-resistance of 145mOhm and is housed in a TO-220 package.
Mfr Part #:

IXFP22N65X2

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXFP22N65X2 is an N-Channel power MOSFET from IXYS, rated for 650V drain-source voltage and 22A continuous current. It features low on-resistance of 145mOhm and is housed in a TO-220 package.
Total Stock: 36 pcs
$ Price Range: $3.38 - $7.57

IXFP22N65X2 Available from 1 distributor

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IXFP22N65X2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time (trr)
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

IXFP22N65X2 Description

Short technical summary and product information.

The IXFP22N65X2 is a 650V, 22A N-Channel enhancement-mode power MOSFET from IXYS' X2-Class HiPerFET family. Designed for high efficiency, it offers a low maximum on-resistance of 145mOhm (tested at VGS=10V, ID=11A) and a typical gate charge of 37nC, enabling fast switching in power conversion circuits. The device is avalanche rated with a single-pulse avalanche energy of 1J and an avalanche current of 5A. It includes a body diode with a reverse recovery time of 145ns and forward voltage of 1.4V.

 

This MOSFET is suited for switch-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is mounted in a standard TO-220-3 through-hole package with low inductance. The junction temperature range is -55°C to +150°C, with a maximum power dissipation of 390W at 25°C case temperature. Thermal resistance junction-to-case is 0.32°C/W, and mounting torque is 1.13N·m.

IXFP22N65X2 Quick Information

Product Type: N-Channel Power MOSFET
Series: X2
Canonical Name: IXFP22N65X2 N-Channel Power MOSFET 650V 22A TO-220
Subcategory: Single

IXFP22N65X2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFP22N65X2 Estimated Pricing

Qty Low High
1+ $7.57 $7.57
10+ $4.06 $4.06
100+ $3.52 $3.52
500+ $3.38 $3.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFP22N65X2 Features

  • 650V drain-source voltage rating.
  • 22A continuous drain current at 25°C.
  • Low 145mOhm on-resistance typical.
  • Avalanche rated for 1J single pulse.
  • TO-220 through-hole package.

IXFP22N65X2 Applications

  • Switch-mode and resonant-mode power supplies.
  • DC-DC converters and PFC circuits.
  • AC and DC motor drives.
  • Robotics and servo controls.

IXFP22N65X2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IXFP22N65X2?

The drain-source voltage (Vdss) is 650V minimum.

What is the package type for this MOSFET?

It comes in a TO-220-3 (TO-220) through-hole package.

What is the operating temperature range?

The junction temperature range is -55°C to +150°C.

Is the IXFP22N65X2 RoHS compliant?

The part is marked as RoHS3 compliant, but this status is unverified from official sources.

What is the gate threshold voltage?

The gate threshold voltage (Vgs(th)) ranges from 3.5V to 5.0V, tested at VDS=VGS, ID=1.5mA.

What is the maximum on-resistance?

The maximum drain-source on-resistance is 145mOhm at VGS=10V, ID=11A.

What is the typical gate charge?

Typical gate charge (Qg) is 37nC at VGS=10V, VDS=325V, ID=11A.

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