| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFP20N85X is an N-Channel enhancement-mode MOSFET from IXYS, designed for high-voltage switching applications. It features a drain-source breakdown voltage of 850V and a continuous drain current of 20A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 330mΩ at 500mA gate drive of 10V, a maximum gate charge of 63nC at 10V, and a maximum input capacitance of 1660pF at 25V drain-source. The device can dissipate up to 540W at 25°C case temperature.
The MOSFET is housed in a standard TO-220-3 through-hole package, suitable for PCB mounting with heatsinking. It operates over a junction temperature range of -55°C to 150°C. The gate threshold voltage is 5.5V maximum at 2.5mA drain current, and the maximum gate-source voltage is ±30V.
| Qty | Low | High |
|---|---|---|
| 1+ | $11.29 | $11.29 |
| 10+ | $7.14 | $7.14 |
| 100+ | $6.10 | $6.10 |
| 500+ | $5.66 | $5.66 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
850V.
20A at 25°C case temperature.
330mΩ maximum at 500mA drain current and 10V gate-source voltage.
TO-220-3 through-hole package.
-55°C to 150°C junction temperature.
Yes, it is listed as RoHS3 compliant (unverified).
540W at 25°C case temperature.