| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 20+19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFP14N85X is an N-Channel enhancement-mode power MOSFET using Metal Oxide (MOSFET) technology. With a maximum drain-to-source voltage of 850V and continuous drain current of 14A (Tc), this device provides efficient switching and conduction performance. The maximum on-resistance is 550mOhm at Vgs = 10V and Id = 500mA, enabling low conduction losses in high-voltage circuits.
This component features a maximum gate charge of 30nC and an input capacitance of 1043pF, supporting manageable drive requirements. The maximum gate threshold voltage is 5.5V, and the gate-source voltage rating is ±30V. It can dissipate up to 460W (case temperature) and operates over a junction temperature range of -55°C to +150°C.
The IXFP14N85X is offered in a through-hole mounting configuration and comes in a TO-220-3 package with the supplier device package designation TO-220AB. RoHS compliance and REACH unaffected status are indicated but unverified. Designed for high-voltage applications requiring robust power handling.
| Qty | Low | High |
|---|---|---|
| 300+ | $4.55 | $4.55 |
| 500+ | $4.24 | $4.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
850V.
14A at case temperature (Tc).
Through-hole TO-220-3 (TO-220AB).
-55°C to +150°C.
Database indicates RoHS3 compliant, but this is unverified.
5.5V at Id = 1mA.
460W at case temperature (Tc).