IXFP14N60P IXFP14N60P is a 600V, 14A N-Channel enhancement mode power MOSFET from IXYS, featuring a low on-resistance of 550mOhm. It is housed in a TO-220-3 through-hole package.
Mfr Part #:

IXFP14N60P

Available from 1 distributors
Mfr Name: IXYS
IXYS
IXFP14N60P is a 600V, 14A N-Channel enhancement mode power MOSFET from IXYS, featuring a low on-resistance of 550mOhm. It is housed in a TO-220-3 through-hole package.
Total Stock: 443 pcs
$ Price Range: $3.03 - $7.06

IXFP14N60P Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
443 pcs
443 pcs On Request 1 On Request On Request 09+ On Request On Request

IXFP14N60P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time (trr)
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

IXFP14N60P Description

Short technical summary and product information.

The IXFP14N60P is a 600V, 14A N-Channel enhancement mode power MOSFET from IXYS, part of the Polar HiPerFET family. It features a maximum drain-source voltage of 600V and a continuous drain current of 14A at 25°C case temperature. The typical on-resistance is 550mOhm at 7A and 10V gate drive, with a total gate charge of 36nC typical. The device is avalanche rated up to 900mJ, and offers fast switching with typical turn-on delay of 23ns, rise time of 27ns, turn-off delay of 70ns, and fall time of 26ns. Input capacitance is 2500pF typical.

 

Designed for high-power switching applications, the IXFP14N60P is suitable for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics and servo controls. The low gate charge and on-resistance contribute to high efficiency and power density.

 

The device is packaged in a TO-220-3 through-hole package, which is easy to mount with a maximum mounting torque of 1.13 Nm. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 300W at 25°C case temperature.

IXFP14N60P Quick Information

Product Type: N-Channel Power MOSFET
Series: Polar HiPerFET
Canonical Name: IXFP14N60P N-Channel Power MOSFET, 600V, 14A, TO-220-3
Subcategory: N-Channel Power MOSFET

IXFP14N60P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFP14N60P Estimated Pricing

Qty Low High
1+ $7.06 $7.06
10+ $4.73 $4.73
100+ $3.79 $3.79
500+ $3.17 $3.17
1,000+ $3.03 $3.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFP14N60P Features

  • 600V drain-source voltage rating.
  • 14A continuous drain current at 25°C.
  • Low on-resistance of 550mOhm typical.
  • Avalanche energy rated at 900mJ.
  • TO-220-3 through-hole package.

IXFP14N60P Applications

  • Switch-mode and resonant-mode power supplies.
  • DC-DC converters and PFC circuits.
  • AC and DC motor drives.
  • Robotics and servo controls.
  • General purpose high-voltage switching.

IXFP14N60P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IXFP14N60P?

600V.

What is the continuous drain current rating?

14A at case temperature 25°C.

What is the typical on-resistance?

550mOhm at 7A and 10V gate drive.

What is the gate threshold voltage range?

3.0V to 5.5V at 2.5mA drain current.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the package type?

TO-220-3 (through-hole).

Is the IXFP14N60P RoHS compliant?

The component is listed as RoHS3 compliant, but this status is unverified.

Home
Account

Categories