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IXFN80N50P N-Channel MOSFET rated for 500V drain-source voltage and 66A continuous drain current. Features 65mOhm on-resistance at 10V gate drive.
Mfr Part #:

IXFN80N50P

Available from 1 distributors
Mfr Name: IXYS
IXYS
N-Channel MOSFET rated for 500V drain-source voltage and 66A continuous drain current. Features 65mOhm on-resistance at 10V gate drive.
✓ Total Stock: 151 pcs
$ Price Range: $30.06 - $38.81

IXFN80N50P Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
151 pcs
On Request
151 pcs On Request 1 On Request On Request 1316+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IXFN80N50P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IXFN80N50P Description

Short technical summary and product information.

The IXFN80N50P is an N-channel power MOSFET designed for high-voltage, high-current switching applications. It features a drain-source voltage rating of 500V and a continuous drain current of 66A at case temperature. The on-resistance is typically 65mOhm at 10V gate drive, ensuring low conduction losses. The device has a maximum gate charge of 195nC and input capacitance of 12700pF, which are important for switching performance.

 

The MOSFET is housed in a SOT-227-4 miniBLOC package, which is a chassis-mount package suitable for high-power applications. The maximum power dissipation is 700W at case temperature. The operating junction temperature range is -55°C to 150°C.

 

The device is RoHS3 compliant with a moisture sensitivity level of 1 (unlimited) and is REACH unaffected.

IXFN80N50P Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXFN80N50P N-Channel MOSFET, 500V, 66A, SOT-227B
Subcategory: Single

IXFN80N50P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFN80N50P Estimated Pricing

Qty Low High
1+ $38.81 $38.81
10+ $30.20 $30.20
100+ $30.06 $30.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFN80N50P Features

  • 500V drain-source voltage rating.
  • 66A continuous drain current capability.
  • 65mOhm maximum on-resistance at 10V gate drive.
  • 700W maximum power dissipation.
  • SOT-227B chassis-mount package.

IXFN80N50P Applications

  • Used in high-voltage switch-mode power supplies.
  • Suitable for motor drive and inverter circuits.
  • Ideal for high-power DC-DC converters.
  • Applied in industrial power control systems.

IXFN80N50P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IXFN80N50P?

The drain-source voltage rating is 500V.

What is the maximum continuous drain current of the IXFN80N50P?

The maximum continuous drain current is 66A at case temperature (Tc).

What is the on-resistance of the IXFN80N50P?

The maximum on-resistance is 65mOhm at Id=500mA and Vgs=10V.

What is the gate charge of the IXFN80N50P?

The maximum gate charge is 195nC at Vgs=10V.

What is the package type of the IXFN80N50P?

The package is SOT-227-4, miniBLOC, with supplier device package SOT-227B.

What is the operating temperature range of the IXFN80N50P?

The operating junction temperature range is -55°C to 150°C.

Is the IXFN80N50P RoHS compliant?

Yes, the device is RoHS3 compliant (unverified).

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