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IXFN80N50 N-Channel MOSFET rated for 500V drain-source voltage and 66A drain current. Features 55mOhm on-resistance and 700W power dissipation in a SOT-227B chassis mount package.
Mfr Part #:

IXFN80N50

Available from 1 distributors
Mfr Name: IXYS
IXYS
N-Channel MOSFET rated for 500V drain-source voltage and 66A drain current. Features 55mOhm on-resistance and 700W power dissipation in a SOT-227B chassis mount package.
✓ Total Stock: 1,570 pcs
$ Price Range: $51.58 - $71.00

IXFN80N50 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
1,570 pcs
On Request
1570 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IXFN80N50 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IXFN80N50 Description

Short technical summary and product information.

The IXFN80N50 is an N-Channel MOSFET from IXYS designed for high-power switching applications. It features a maximum drain-source voltage of 500V and a continuous drain current of 66A at case temperature (Tc). The device offers a low on-resistance of 55mOhm at 10V gate drive, enabling efficient power conversion. With a maximum gate charge of 380nC and input capacitance of 9890pF, it is suitable for moderate frequency switching. The MOSFET is housed in a SOT-227B (miniBLOC) package for chassis mount installation, providing excellent thermal performance with a maximum power dissipation of 700W. The operating junction temperature range is -55°C to 150°C. This device is RoHS3 compliant and has an MSL of 1 (unlimited). Typical applications include power supplies, motor drives, and inverters.

IXFN80N50 Quick Information

Product Type: MOSFET
Canonical Name: IXFN80N50 N-Channel MOSFET, 500V Drain-Source Voltage, 66A Drain Current, SOT-227B
Subcategory: Single MOSFETs

IXFN80N50 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFN80N50 Estimated Pricing

Qty Low High
1+ $71.00 $71.00
10+ $54.64 $54.64
100+ $51.58 $51.58

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFN80N50 Features

  • N-Channel MOSFET with 500V drain-source voltage.
  • Continuous drain current of 66A at case temperature.
  • Low on-resistance of 55mOhm at 10V gate drive.
  • Chassis mount SOT-227B package for easy installation.
  • RoHS3 compliant and MSL 1 rated.

IXFN80N50 Applications

  • Used in high-power switching power supplies.
  • Ideal for motor drive and inverter circuits.
  • Suitable for DC-DC converters and battery chargers.
  • Applied in industrial power control systems.

IXFN80N50 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the IXFN80N50?

-55°C to 150°C (junction temperature).

What package does the IXFN80N50 come in?

SOT-227-4, miniBLOC (SOT-227B) for chassis mount.

Is the IXFN80N50 RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What type of MOSFET is the IXFN80N50?

N-Channel MOSFET (Metal Oxide).

What is the maximum drain-source voltage of the IXFN80N50?

500V.

What is the maximum drain current of the IXFN80N50?

66A at case temperature (Tc).

What is the on-resistance of the IXFN80N50?

55mOhm maximum at Id=500mA, Vgs=10V.

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