| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
920 pcs
|
920 pcs | On Request | 25 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFN60N80P is an N-Channel enhancement-mode MOSFET manufactured by IXYS, designed for high-voltage power switching applications. The device features a maximum drain-source voltage (Vdss) of 800 V and a continuous drain current of 53 A at case temperature (Tc). It achieves a low maximum on-resistance of 140 mOhm at a gate drive of 10 V and drain current of 30 A, enabling efficient power conversion.
This MOSFET uses metal-oxide semiconductor technology and includes a gate threshold voltage (Vgs(th)) of 5 V maximum at 8 mA drain current. The device can handle a maximum gate-source voltage of ±30 V and has a total gate charge of 250 nC at 10 V. Input capacitance (Ciss) is rated at 18000 pF at 25 V drain-source bias.
The IXFN60N80P is housed in the SOT-227-4 (miniBLOC) package with a supplier device package designation of SOT-227B. It is designed for chassis mount installation, making it suitable for power modules and industrial equipment requiring high current capacity. The thermal design supports a maximum power dissipation of 1040 W at case temperature and an operating junction temperature range from -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $58.62 | $58.62 |
| 10+ | $47.49 | $47.49 |
| 100+ | $41.30 | $41.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 800 V.
The continuous drain current is 53 A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 140 mOhm at Vgs = 10 V and Id = 30 A.
The junction operating temperature range is -55°C to 150°C.
The device is housed in a SOT-227-4 (miniBLOC) package with supplier device package SOT-227B, designed for chassis mount.
RoHS3 compliance is declared but unverified.