IXFN50N80Q2 IXFN50N80Q2 is an N-Channel MOSFET from IXYS rated for 800V drain-source voltage and 50A continuous drain current.
Mfr Part #:

IXFN50N80Q2

Available from 1 distributors
Mfr Name: IXYS
IXYS
IXFN50N80Q2 is an N-Channel MOSFET from IXYS rated for 800V drain-source voltage and 50A continuous drain current.
Total Stock: 1,696 pcs
$ Price Range: $36.21

IXFN50N80Q2 Available from 1 distributor

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IXFN50N80Q2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFN50N80Q2 Description

Short technical summary and product information.

The IXFN50N80Q2 is a single N-Channel power MOSFET manufactured by IXYS. It features a drain-source breakdown voltage of 800V and a continuous drain current of 50A (at case temperature), making it suitable for high-voltage switching applications. The device uses standard MOSFET technology with a maximum on-resistance of 160mOhm at 500mA gate drive voltage of 10V.

 

This MOSFET is housed in a SOT-227B (miniBLOC) chassis-mount package. It is designed for efficient thermal management with a maximum power dissipation of 1135W at case temperature. The operating junction temperature range is from -55°C to 150°C. Key switching parameters include a maximum gate charge of 260nC at 10V and a maximum input capacitance of 13500pF at 25V.

 

The part is RoHS3 compliant and has a Moisture Sensitivity Level of 1 (unlimited), suitable for robust industrial environments. The gate threshold voltage is 5.5V maximum at 8mA drain current, and the maximum gate-source voltage is ±30V.

IXFN50N80Q2 Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXFN50N80Q2 N-Channel MOSFET
Subcategory: Power MOSFET

IXFN50N80Q2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFN50N80Q2 Estimated Pricing

Qty Low High
300+ $36.21 $36.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFN50N80Q2 Features

  • N-Channel power MOSFET rated 800V drain-source.
  • Continuous drain current of 50A at case temperature.
  • Low on-resistance of 160mOhm typical at 10V gate drive.
  • Chassis-mount SOT-227B package for thermal management.
  • RoHS3 compliant with MSL 1 rating.

IXFN50N80Q2 Applications

  • Suitable for high-voltage power switching applications.
  • Used in AC-DC converters and inverters.
  • Ideal for motor control and power supply designs.

IXFN50N80Q2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IXFN50N80Q2?

The drain-source breakdown voltage is 800V.

What is the continuous drain current rating?

The continuous drain current is 50A at case temperature (Tc).

What is the Rds(on) and at what test condition?

The maximum drain-source on-resistance is 160mOhm at 500mA drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction temperature range is from -55°C to 150°C.

What package is the IXFN50N80Q2 available in?

The package is SOT-227-4, miniBLOC, also known as SOT-227B. Mounting type is chassis mount.

What is the maximum power dissipation?

Maximum power dissipation is 1135W at case temperature (Tc).

Is the IXFN50N80Q2 RoHS compliant?

The datasheet indicates RoHS3 compliance, but this is unverified.

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