IXFN38N80Q2 The IXFN38N80Q2 is an N-Channel power MOSFET from IXYS with a drain-source breakdown voltage of 800V and continuous drain current of 38A. It features a typical on-resistance of 220mOhm at 10V gate drive and comes in a chassis-mount SOT227B package.
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IXFN38N80Q2

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXFN38N80Q2 is an N-Channel power MOSFET from IXYS with a drain-source breakdown voltage of 800V and continuous drain current of 38A. It features a typical on-resistance of 220mOhm at 10V gate drive and comes in a chassis-mount SOT227B package.
Total Stock: 98 pcs

IXFN38N80Q2 Available from 1 distributor

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IXFN38N80Q2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
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AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
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Lead Style
Medical Grade
Military Grade
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Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
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Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

IXFN38N80Q2 Description

Short technical summary and product information.

The IXFN38N80Q2 is a high-voltage N-Channel enhancement-mode power MOSFET from IXYS, part of the HiPerFET Q2-Class family. It is designed for applications requiring high voltage and current handling with fast switching performance. The device is avalanche rated and features a fast intrinsic rectifier, making it suitable for demanding power conversion circuits.

 

Key electrical specifications include a drain-source breakdown voltage of 800V (minimum) and a continuous drain current of 38A at case temperature 25°C. The maximum drain-source on-resistance is 220mOhm at a gate-source voltage of 10V and a drain current of 500mA (per existing database) or 19A (per datasheet test condition). The gate threshold voltage ranges from 2V to 4.5V at a drain current of 8mA. The device can handle up to 150A pulsed drain current and 735W power dissipation.

 

The MOSFET is housed in a chassis-mount SOT-227B package (miniBLOC), which provides excellent thermal performance with a junction-to-case thermal resistance of 0.17 K/W. The package is isolated with aluminum nitride and has a weight of 30g. It is designed for robust mounting with a terminal torque specification of 1.5 Nm.

IXFN38N80Q2 Quick Information

Product Type: Power MOSFET
Canonical Name: IXFN38N80Q2 N-Channel Power MOSFET 800V 38A
Subcategory: Power MOSFET

IXFN38N80Q2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

IXFN38N80Q2 Features

  • 800V drain-source breakdown voltage rating.
  • 38A continuous drain current at 25°C.
  • Low on-resistance of 220mOhm typical.
  • Avalanche rated with 4.0J single pulse energy.
  • Chassis-mount SOT-227B package with isolation.

IXFN38N80Q2 Applications

  • High efficiency power supply converters.
  • Motor control and inverter circuits.
  • Uninterruptible power supply (UPS) systems.
  • Inductive heating and welding equipment.
  • High voltage DC-DC converters.

IXFN38N80Q2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IXFN38N80Q2?

The minimum drain-source breakdown voltage is 800V at a junction temperature of 25°C to 150°C.

What package does the IXFN38N80Q2 come in?

It is available in a chassis-mount SOT-227-4 miniBLOC package, also known as SOT-227B.

What is the operating temperature range of the IXFN38N80Q2?

The operating junction temperature range is -55°C to +150°C.

Is the IXFN38N80Q2 RoHS compliant?

The device is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.

What is the continuous drain current rating of the IXFN38N80Q2?

The maximum continuous drain current is 38A at a case temperature of 25°C.

What is the gate threshold voltage of the IXFN38N80Q2?

The gate threshold voltage ranges from 2.0V minimum to 4.5V maximum at a drain current of 8mA.

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